A reliable analytical expression for the potential of plasma waves with phase velocities near the speed of light is derived.The presented spheroid cavity model is more consistent than the previous spherical and ellips...A reliable analytical expression for the potential of plasma waves with phase velocities near the speed of light is derived.The presented spheroid cavity model is more consistent than the previous spherical and ellipsoidal models and it explains the mono-energetic electron trajectory more accurately,especially at the relativistic region.The maximum energy of electrons is calculated and it is shown that the maximum energy of the spheroid model is less than that of the spherical model.The electron energy spectrum is also calculated and it is found that the energy distribution ratio of electrons △E/E for the spheroid model under the conditions reported here is half that of the spherical model and it is in good agreement with the experimental value in the same conditions.As a result,the quasi-mono-energetic electron output beam interacting with the laser plasma can be more appropriately described with this model.展开更多
We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mo...We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mode and scanning tunneling microscopy （STM）. Topology measurement of the surface with C-AFM showed that, a single Ni/n-Si SD consists of many patches with different sizes. These patches are sets of parallel diodes and electrically interacting contacts of 5 to 50 nm sizes and between these individual diodes, there exists an additional electric field. In real metal semiconductor contacts （MSC）, patches with quite different configurations, various geometrical sizes and local work functions were randomly distributed on the surface of the metal. The direction and intensity of the additional electric field are distributed in homogenously along the contact metal surface. SBH controls the electronic transport across the MS interface and therefore, is of vital importance to the successful operation of semiconductor devices.展开更多
基金Project supported by the Research Deputy Office in the Islamic Azad University of Maragheh Branch
文摘A reliable analytical expression for the potential of plasma waves with phase velocities near the speed of light is derived.The presented spheroid cavity model is more consistent than the previous spherical and ellipsoidal models and it explains the mono-energetic electron trajectory more accurately,especially at the relativistic region.The maximum energy of electrons is calculated and it is shown that the maximum energy of the spheroid model is less than that of the spherical model.The electron energy spectrum is also calculated and it is found that the energy distribution ratio of electrons △E/E for the spheroid model under the conditions reported here is half that of the spherical model and it is in good agreement with the experimental value in the same conditions.As a result,the quasi-mono-energetic electron output beam interacting with the laser plasma can be more appropriately described with this model.
文摘We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mode and scanning tunneling microscopy （STM）. Topology measurement of the surface with C-AFM showed that, a single Ni/n-Si SD consists of many patches with different sizes. These patches are sets of parallel diodes and electrically interacting contacts of 5 to 50 nm sizes and between these individual diodes, there exists an additional electric field. In real metal semiconductor contacts （MSC）, patches with quite different configurations, various geometrical sizes and local work functions were randomly distributed on the surface of the metal. The direction and intensity of the additional electric field are distributed in homogenously along the contact metal surface. SBH controls the electronic transport across the MS interface and therefore, is of vital importance to the successful operation of semiconductor devices.
