Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical va...Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition （PECVD） has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes （VACNTs）. Though CNTs show a trend to be integrated into nanoelectromechanical system （NEMS）, CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.展开更多
基金supported by EU programs "Nanotec","Mercure","Nanocom","Nano-RF" and "Nanotherm", the SSF program"Scalable Nanomaterials and Solution Processable Thermoelectric Generators", and also Contract No.EM11-0002a part of the Sustainable Production Initiative and the Production Area of Advance at Chalmerssupported by the Shanghai Science and Technology Program(Grant No.12JC1403900) and NSFC(Grant No.51272153)
文摘Due to their unique thermal, electronic and mechanical properties, carbon nanotubes （CNTs） have aroused various attentions of many researchers. Among all the techniques to fabricate CNTs, plasma enhanced chemical vapor deposition （PECVD） has been extensively developed as one growth technique to produce verticallyaligned car bon nanotubes （VACNTs）. Though CNTs show a trend to be integrated into nanoelectromechanical system （NEMS）, CNT growth still remains a mysterious technology. This paper attempts to reveal the effects of substrates and un derlayers to CNT synthesis. We tried five different substrates by substituting intrinsic Si with high resistivity ones and byincreasing the thickness of SiO2 insulativity layer. And also, we demonstrated an innovative way of adjusting CNT den sity by changing the thickness of Cu underlayer.
