A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical ...A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor.The lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability.The simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.展开更多
Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin f...Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin film shown good crystal quality and decent surface morphology.Irradiated by a 254-nm DUV light,the photodetector displayed good optoelectronic performance and high wavelength selectivity,such as photoresponsivity(R)of 175.69 A/W,detectivity(D*)of 2.46×10^(15) Jones,external quantum efficiency(EQE)of 8.6×10^(4)%and good photocurrent-intensity linearity,suggesting decent DUV photosensing performance.At 5 V and under illumination with light intensity of 800μW/cm2,the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination;and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.展开更多
We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detecto...We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.展开更多
The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across...The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces.In this work,the band offsets of the Ga_(2)O_(3)/FTO heterojunction are studied using x-ray photoelectron spectroscopy(XPS)based on Kraut’s method,which suggests a staggered type-II alignment with a conduction band offset(DEC)of 1.66 eV and a valence band offset(DEV)of2.41 eV.Furthermore,the electronic properties of the Ga_(2)O_(3)/FTO heterostructure are also measured,both in the dark and under ultraviolet(UV)illuminated conditions(254 nm UV light).Overall,this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga_(2)O_(3).展开更多
A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin fi...A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.展开更多
Objective:To analyze the trauma and bone metabolism of magnetic navigation intramedullary nail and traditional intramedullary nail fixation treatment of femoral shaft fracture. Methods:58 patients with femoral shaft f...Objective:To analyze the trauma and bone metabolism of magnetic navigation intramedullary nail and traditional intramedullary nail fixation treatment of femoral shaft fracture. Methods:58 patients with femoral shaft fracture treated in our hospital between December 2011 and December 2015 were divided into observation group and control group by random number table (n=29). Control group received conventional intramedullary nail fixation treatment, and observation group received magnetic navigation intramedullary nail fixation treatment. 24 h after surgery, blood coagulation indexes, enzymology indexes, bone metabolism indexes and angiogenesis indexes were determined;6 months after surgery, bone mineral density levels were determined. Results:24 h after surgery, peripheral blood thrombin time (TT), prothrombin time (PT), and activated partial thromboplastin time (APTT) levels of observation group were significantly higher than those of control group, and serum fibrinogen (FIB), D-Dimer (D-D), lactate dehydrogenase (LDH), creatine kinase (CK), creatine kinase isoenzyme (CKMB), glutamic oxalacetic transaminase (GOT), sex hormone-binding globulin type I (SHBG), collagen cross-linked carboxyl-terminal telopeptide (CTX) and deoxypyridinoline (DPD) content were lower than those of control group while bone gla protein (BGP), insulin-like growth factor (IGF-1), hypoxia-inducible factor-1α (HIF-α), angiogenin 1 (Ang-1), recombinant basic fibroblast growth factor (bFGF) and vascular endothelial growth factor (VEGF) content were higher than those of control group;6 months after surgery, fracture end bone mineral density (BMD) value of observation group was higher than that of control group. Conclusions:Magnetic navigation intramedullary nail treatment of femoral shaft fracture can more effectively reduce the surgical trauma, improve bone metabolism and increase bone mineral density.展开更多
High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor...High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor.The constructing heterostructure is one of the significant approaches in design strategies of sensing materials.This heterostructure effectively increases the active site for improving sensing performance and decreasing energy consumption.Herein,the heterostructure of Au nanoparticles modified CeO_(2)@carbon-quantum-dots(Au/CeO_(2)@CQDs) with a three-dimensional(3D) scaffold structure are successfully synthesized by an effective strategy,which can apply for preparing flexible gas sensor.The gas sensing properties of Au/CeO_(2)@CQDs based on flexible substrate are obtained under long-term repeated NO_(2) exposure at RT.Meanwhile,the long-term mechanical stability of this gas sensing device is also detected after different bending cycles.The Au/CeO_(2)@CQDs based on flexible substrate sensor exhibits excellent performance,including higher sensitivity(47.2),faster response(18 s)and recovery time(22 s) as well as longer-term stability than performance of pure materials.The obtained sensor also reveals outstanding mechanical flexibility,which is only a tiny response fluctuation(8.1%) after 500 bending/relaxing cycles.Therefore,our study demonstrates the enormous potential of this sensing materials for hazardous gas monitoring in future portable and wearable sensing platform.展开更多
基金supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002)Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 62204125)+1 种基金the National Key R&D Program of China (Grant No. 2022YFB3605404)the Natural Science Foundation of Guangdong Province, China (Grant No. 2019A1515010790)。
文摘A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor.The lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability.The simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.
基金the National Natural Science Foundation of China(Ganrt No.62004047)。
文摘Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin film shown good crystal quality and decent surface morphology.Irradiated by a 254-nm DUV light,the photodetector displayed good optoelectronic performance and high wavelength selectivity,such as photoresponsivity(R)of 175.69 A/W,detectivity(D*)of 2.46×10^(15) Jones,external quantum efficiency(EQE)of 8.6×10^(4)%and good photocurrent-intensity linearity,suggesting decent DUV photosensing performance.At 5 V and under illumination with light intensity of 800μW/cm2,the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination;and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.
基金Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314)the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China。
文摘We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.
基金Project supported by the Fund of Shanxi Institute of Technology(Grant No.2021QD-15)2020 Excellent Doctoral Award Fund for working in Shanxi Province(Shanxi Institute of Technology),China(Grant No.2021PT-09)the National Natural Science Foundation of China(Grant No.62004047).
文摘The determination of band offsets is crucial in the optimization of Ga_(2)O_(3)-based devices,since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces.In this work,the band offsets of the Ga_(2)O_(3)/FTO heterojunction are studied using x-ray photoelectron spectroscopy(XPS)based on Kraut’s method,which suggests a staggered type-II alignment with a conduction band offset(DEC)of 1.66 eV and a valence band offset(DEV)of2.41 eV.Furthermore,the electronic properties of the Ga_(2)O_(3)/FTO heterostructure are also measured,both in the dark and under ultraviolet(UV)illuminated conditions(254 nm UV light).Overall,this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga_(2)O_(3).
基金Project supported by the National Natural Science Foundation of China(Grant No.61774019)Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)。
文摘A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film is prepared through the metalorganic chemical vapor deposition technique,then used to construct the photodetector array via photolithography,lift-off,and ion beam sputtering methods.The one photodetector cell shows dark current of 1.94 p A,phototo-dark current ratio of 6×10_(7),photo responsivity of 634.15 A·W^(-1),specific detectivity of 5.93×1011cm·Hz1/2·W^(-1)(Jones),external quantum efficiency of 310000%,and linear dynamic region of 108.94 d B,indicating high performances for DUV photo detection.Furthermore,the 16-cell photodetector array displays uniform performances with decent deviation of 19.6%for photo responsivity.
文摘Objective:To analyze the trauma and bone metabolism of magnetic navigation intramedullary nail and traditional intramedullary nail fixation treatment of femoral shaft fracture. Methods:58 patients with femoral shaft fracture treated in our hospital between December 2011 and December 2015 were divided into observation group and control group by random number table (n=29). Control group received conventional intramedullary nail fixation treatment, and observation group received magnetic navigation intramedullary nail fixation treatment. 24 h after surgery, blood coagulation indexes, enzymology indexes, bone metabolism indexes and angiogenesis indexes were determined;6 months after surgery, bone mineral density levels were determined. Results:24 h after surgery, peripheral blood thrombin time (TT), prothrombin time (PT), and activated partial thromboplastin time (APTT) levels of observation group were significantly higher than those of control group, and serum fibrinogen (FIB), D-Dimer (D-D), lactate dehydrogenase (LDH), creatine kinase (CK), creatine kinase isoenzyme (CKMB), glutamic oxalacetic transaminase (GOT), sex hormone-binding globulin type I (SHBG), collagen cross-linked carboxyl-terminal telopeptide (CTX) and deoxypyridinoline (DPD) content were lower than those of control group while bone gla protein (BGP), insulin-like growth factor (IGF-1), hypoxia-inducible factor-1α (HIF-α), angiogenin 1 (Ang-1), recombinant basic fibroblast growth factor (bFGF) and vascular endothelial growth factor (VEGF) content were higher than those of control group;6 months after surgery, fracture end bone mineral density (BMD) value of observation group was higher than that of control group. Conclusions:Magnetic navigation intramedullary nail treatment of femoral shaft fracture can more effectively reduce the surgical trauma, improve bone metabolism and increase bone mineral density.
基金financially supported by the Natural Science Foundation of Shandong Province (Nos. ZR2021QB136 and ZR2022MH091)the Innovation and Entrepreneurship Training Program for Undergraduates of Shandong Province (No.S202110439100)+2 种基金Tai'an Science and Technology Innovation Development Project (No.2021GX068)the Academic Promotion Program of Shandong First Medical University (No. 2019QL008)the Chinese Academy of Sciences。
文摘High-performance gas sensing materials operated at room temperature(RT) are attractive for a variety of real-time gas monitoring applications,especially with the excellent durability and flexibility of wearable sensor.The constructing heterostructure is one of the significant approaches in design strategies of sensing materials.This heterostructure effectively increases the active site for improving sensing performance and decreasing energy consumption.Herein,the heterostructure of Au nanoparticles modified CeO_(2)@carbon-quantum-dots(Au/CeO_(2)@CQDs) with a three-dimensional(3D) scaffold structure are successfully synthesized by an effective strategy,which can apply for preparing flexible gas sensor.The gas sensing properties of Au/CeO_(2)@CQDs based on flexible substrate are obtained under long-term repeated NO_(2) exposure at RT.Meanwhile,the long-term mechanical stability of this gas sensing device is also detected after different bending cycles.The Au/CeO_(2)@CQDs based on flexible substrate sensor exhibits excellent performance,including higher sensitivity(47.2),faster response(18 s)and recovery time(22 s) as well as longer-term stability than performance of pure materials.The obtained sensor also reveals outstanding mechanical flexibility,which is only a tiny response fluctuation(8.1%) after 500 bending/relaxing cycles.Therefore,our study demonstrates the enormous potential of this sensing materials for hazardous gas monitoring in future portable and wearable sensing platform.
