A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively ...A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively small length,it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics.The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and Ga N.On the other hand,the current density is decreased beneath the dielectric layer with the increasing length of the Si N,resulting in a high on-resistance.Furthermore,the introduction of the field plate on the side wall forms an metal-oxide-semiconductor(MOS)channel and decreases the series resistance,but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.展开更多
High-quality polycrystalline diamond films with dominated(100)-oriented grains are realized by combining the thermally oxidation and the homogeneous second growth processes.Moreover,we investigate the wettability prop...High-quality polycrystalline diamond films with dominated(100)-oriented grains are realized by combining the thermally oxidation and the homogeneous second growth processes.Moreover,we investigate the wettability property of the polycrystalline diamonds in various stages.Different surface structures(with various grain sizes,voids,and orientations,etc.)and terminations(hydrogen or oxygen)have significant effects on the wettability of polycrystalline diamond films.The wettability is further closely related to the polarity of solutions.By measuring the contact angle and calculating the dispersion and polarity components,we estimate the surface energy of polycrystalline diamond films,and explore the factors affecting the surface energy.The modulations in growth quality and wettability property of polycrystalline diamond films provide valuable data for development of diamond-based multiple devices in practical applications.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)the Natural Science Foundation of Sichuan Province,China(Grant No.22YYJC0596)。
文摘A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively small length,it suppresses the electric field crowding effect without presenting an obvious effect on the forward characteristics.The enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and Ga N.On the other hand,the current density is decreased beneath the dielectric layer with the increasing length of the Si N,resulting in a high on-resistance.Furthermore,the introduction of the field plate on the side wall forms an metal-oxide-semiconductor(MOS)channel and decreases the series resistance,but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.
基金supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B0101690001)the National Natural Science Foundation of China(Grant No.51972135)。
文摘High-quality polycrystalline diamond films with dominated(100)-oriented grains are realized by combining the thermally oxidation and the homogeneous second growth processes.Moreover,we investigate the wettability property of the polycrystalline diamonds in various stages.Different surface structures(with various grain sizes,voids,and orientations,etc.)and terminations(hydrogen or oxygen)have significant effects on the wettability of polycrystalline diamond films.The wettability is further closely related to the polarity of solutions.By measuring the contact angle and calculating the dispersion and polarity components,we estimate the surface energy of polycrystalline diamond films,and explore the factors affecting the surface energy.The modulations in growth quality and wettability property of polycrystalline diamond films provide valuable data for development of diamond-based multiple devices in practical applications.
