Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize subst...Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample-substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD-substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS_(2)) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS_(2)-substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS_(2) by its low-wavenumber interface mode. It is demonstrated that the enhanced sample-substrate interaction leads to tensile strain on monolayer WS_(2), which is induced during the cooling process of CVD growth and could be released for monolayer WS_(2) sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample-substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample-substrate coupling strength based on 2D TMDs.展开更多
基金This work is supported by the National Natural Science Foundation of China(Nos.62004197 and 61774040)the Ministry of Education of Singapore(No.MOE2019-T2-1-004)+5 种基金the Singapore National Research Foundation under the Competitive Research Programs(No.NRF-CRP-21-2018-0007)the National Key R&D Program of China(No.2018YFA0703700)the National Young 1000 Talent Plan of China,the Shanghai Municipal Natural Science Foundation(No.20ZR1403200)the Shanghai Municipal Science and Technology Commission(No.18JC1410300)the Fudan University-CIOMP Joint Fund(No.FC2018-002)the Natural Science Foundation of Liaoning Province,China(Nos.2019-BS-243 and 2019-MS-320).
文摘Substrates provide the necessary support for scientific explorations of numerous promising features and exciting potential applications in two-dimensional (2D) transition metal dichalcogenides (TMDs). To utilize substrate engineering to alter the properties of 2D TMDs and avoid introducing unwanted adverse effects, various experimental techniques, such as high-frequency Raman spectroscopy, have been used to understand the interactions between 2D TMDs and substrates. However, sample-substrate interaction in 2D TMDs is not yet fully understood due to the lack of systematic studies by techniques that are sensitive to 2D TMD-substrate interaction. This work systematically investigates the interaction between tungsten disulfide (WS_(2)) monolayers and substrates by low-frequency Raman spectroscopy, which is very sensitive to WS_(2)-substrate interaction. Strong coupling with substrates is clearly revealed in chemical vapor deposition (CVD)-grown monolayer WS_(2) by its low-wavenumber interface mode. It is demonstrated that the enhanced sample-substrate interaction leads to tensile strain on monolayer WS_(2), which is induced during the cooling process of CVD growth and could be released for monolayer WS_(2) sample after transfer or fabricated by an annealing-free method such as mechanical exfoliation. These results not only suggest the effectiveness of low-frequency Raman spectroscopy for probing sample-substrate interactions in 2D TMDs, but also provide guidance for the design of high-performance devices with the desired sample-substrate coupling strength based on 2D TMDs.