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Cu/Ta/SiO2/Si薄膜在纳米压痕下的分层现象研究 被引量:1
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作者 吴子景 吴晓京 +2 位作者 卢茜 shen weidian 蒋宾 《半导体技术》 CAS CSCD 北大核心 2008年第9期787-790,共4页
采用磁控溅射技术在热氧化单晶硅衬底上先后淀积了厚度分别为50 nm的Ta膜和400 nm的Cu膜。使用纳米压入仪在样品表面进行压入测试,在薄膜表面制造出残留压痕。使用扫描电镜(SEM)、聚焦离子束(FIB)、透射电镜(TEM)和X射线能谱仪(EDX)对... 采用磁控溅射技术在热氧化单晶硅衬底上先后淀积了厚度分别为50 nm的Ta膜和400 nm的Cu膜。使用纳米压入仪在样品表面进行压入测试,在薄膜表面制造出残留压痕。使用扫描电镜(SEM)、聚焦离子束(FIB)、透射电镜(TEM)和X射线能谱仪(EDX)对残留压痕形貌、剖面上的分层现象进行观察,确定分层所在的位置。发现在69 mN的最大载荷作用后,在Ta/SiO2界面处发生分层。分层的原因主要归结为在应力作用下,多层膜中各种材料的应变、弹性恢复能力不同。 展开更多
关键词 Cu/Ta薄膜 纳米压痕 分层
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Nanoindentation study of a Cu/Ta/SiO_2/Si multilayer system
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作者 张昕 卢茜 +3 位作者 吴子景 吴晓京 shen weidian 蒋宾 《Journal of Semiconductors》 EI CAS CSCD 2012年第4期17-22,共6页
Tantalum and copper layers were deposited on a thermally oxidized Si substrate in a magnetron sputtering process. Nanoindentation was adopted to investigate the hardness and elastic modulus of the Cu/Ta/Si02/Si multil... Tantalum and copper layers were deposited on a thermally oxidized Si substrate in a magnetron sputtering process. Nanoindentation was adopted to investigate the hardness and elastic modulus of the Cu/Ta/Si02/Si multilayer system. The hardness shows an apparent dependence on the film thickness, and decreases with the increase of film thickness, whereas the elastic modulus does not. To reveal the structural change, a trench through the center of a residual indent was cut by a focused ion beam, and then examined using an ionicroscope. TEM analysis showed that delamination occurs at the interface between the Ta and the Si02 layer of the residual indent, suggesting that the destruction under a relatively large load is due to weak bonding. 展开更多
关键词 COPPER TANTALUM NANOINDENTATION HARDNESS elastic modulus
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