Low-cost preferential different amine grafted silica spheres adsorbents for DAC CO_(2)removal

DAC CO_(2)capture is gaining wide attention as one of the most difficult carbon approaches to tackle climate change.In this work,different pore-size silica spheres were grafted using different amine groups such as APTES,APTMS,and Diamine.Herein,all samples based on the wet and dry grafting method were used for CO_(2)adsorption isotherm at room temperature and pressure(298 K and 1 bar).The sample based on the wet grafting(Silica-APTES-W)sample shows the highest CO_(2)uptake 1.67 mmol/g.Also,the adsorption isotherm of the Silica-APTES-W sample was showed a high capacity of CO_(2)1.2 mmol/g at 25℃,which describes the strong physical interaction between CO_(2)and amine.The isosteric adsorption of Silica-APTES-W also confirmed that the physical adsorption was dominant because of low adsorption heat ranging from 23 to 37 k J/mol.Also,the fixed bed experiment was conducted with 2000 ppm CO_(2)that obtains the optimal working capacity 4.5 m L/g with the lowest regeneration temperature 90℃.It was shown that Silica-APTES-W sample was superior performance for DAC CO_(2)capture in practical applications.

Sub-stochiometric MoO_(x) by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells

The silicon heterojunction(SHJ)solar cell has long been considered as one of the most promising candidates for the next-generation PV market.Transition metal oxides(TMOs)show good carrier selectivity when combined with c-Si solar cells.This has led to the rapid demonstration of the remarkable potential of TMOs(especially MoO_(x))with high work function to replace the p-type a-Si:H emitting layer.MoO_(x) can induce a strong inversion layer on the interface of n-type c-Si,which is beneficial to the extraction and conduction of holes.In this paper,the radio-frequency(RF)magnetron sputtering is used to deposit MoO_(x) films.The optical,electrical and structural properties of MoO_(x) films are measured and analyzed,with focus on the inherent compositions and work function.Then the MoO_(x) films are applied into SHJ solar cells.When the MoO_(x) works as a buffer layer between ITO/p-a-Si:H interface in the reference SHJ solar cell,a conversion efficiency of 19.1%can be obtained.When the MoOx is used as a hole transport layer(HTL),the device indicates a desirable conversion efficiency of 17.5%.To the best of our knowledge,this current efficiency is the highest one for the MoO_(x) film as HTL by RF sputtering.

Effect of Heat Treatment on the Microstructure and Residual Stresses in (Ti,Al)N Films

（Ti,AI）N films were fabricated by arc ion plating （ALP） and then annealed within a range of temperatures from 200 to 500℃ for 30 rain in vacuum. The results indicate that the average residual stresses decrease slightly from -5.84 to -4.98 GPa with increasing annealing temperature. The stress depth distribution evolves from a sharp ＂bell＂ shape to a mild ＂bell＂ shape, suggesting a more uniform stress state in the annealed films. The microstructure of the films was also investigated in detail. The as-deposited film consists of fine columnar crystals with an amorphous phase at the interface. During heat treatment, the columnar subgrain growth was observed; meanwhile, the phenomenon of crystallization has been identified at the interface. Further more, the relationship between the residual stresses and the microstructure of the films was explored and highlighted. In addition, there is no hardness degradation of the films during heat treatment.