The simple kagome-lattice band structure possesses Dirac cones,flat band,and saddle point with van Hove singularities in the electronic density of states,facilitating the emergence of various electronic orders.Here we...The simple kagome-lattice band structure possesses Dirac cones,flat band,and saddle point with van Hove singularities in the electronic density of states,facilitating the emergence of various electronic orders.Here we report a titanium-based kagome metal CsTi_(3)Bi_(5)where titanium atoms form a kagome network,resembling its isostructural compound CsV_3Sb_5.Thermodynamic properties including the magnetization,resistance,and heat capacity reveal the conventional Fermi liquid behavior in the kagome metal CsTi_(3)Bi_(5)and no signature of superconducting or charge density wave(CDW)transition anomaly down to 85 m K.Systematic angle-resolved photoemission spectroscopy measurements reveal multiple bands crossing the Fermi level,consistent with the first-principles calculations.The flat band formed by the destructive interference of hopping in the kagome lattice is observed directly.Compared to Cs V_(3)Sb_(5),the van Hove singularities are pushed far away above the Fermi level in CsTi_(3)Bi_(5),in line with the absence of CDW.Furthermore,the first-principles calculations identify the nontrivial Z_(2)topological properties for those bands crossing the Fermi level,accompanied by several local band inversions.Our results suppose CsTi_(3)Bi_(5)as a complementary platform to explore the superconductivity and nontrivial band topology.展开更多
Recently discovered kagome metals AV_(3)Sb_(5)(A=K,Rb,and Cs)provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolutio...Recently discovered kagome metals AV_(3)Sb_(5)(A=K,Rb,and Cs)provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism,with the combination of angle-resolved photoemission spectroscopy(ARPES)measurements and density functional theory calculations,we investigate how band dispersions change with the increase of lattice distortions.In particular,we focus on the electronic states around M point,where the van Hove singularities are expected to play crucial roles in the CDW transition.Previous ARPES studies reported a spectral weight splitting of the van Hove singularity around M point,which is associated with the 3D lattice modulations.Our studies reveal that this“splitting”can be connected to the two van Hove singularities at k_(z)=0 and k_(z)=π/c in the normal states.When the electronic system enters into the CDW state,both van Hove singularities move down.Such novel properties are important for understanding of the CDW transition.展开更多
In our most recently published article,[1]an important reference[2]predicting CsTi_(3)Bi_(5) is missing and should be added,along with Ref.[3](originally Ref.[28]),to the introduction section.
Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic...Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.展开更多
Charge density wave(CDW)is a phenomenon that occurs in materials,accompanied by changes in their intrinsic electronic properties.The study of CDW and its modulation in materials holds tremendous significance in materi...Charge density wave(CDW)is a phenomenon that occurs in materials,accompanied by changes in their intrinsic electronic properties.The study of CDW and its modulation in materials holds tremendous significance in materials research,as it provides a unique approach to controlling the electronic properties of materials.TiSe_(2) is a typical layered material with a CDW phase at low temperatures.Through V substitution for Ti in TiSe_(2),we tuned the carrier concentration in V_(x)Ti_(1-x)Se_(2) to study how its electronic structures evolve.Angle-resolved photoemission spectroscopy(ARPES)shows that the band-folding effect is sustained with the doping level up to 10%,indicating the persistence of the CDW phase,even though the band structure is strikingly different from that of the parent compound TiSe_(2).Though CDW can induce the band fold effect with a driving force from the perspective of electronic systems,our studies suggest that this behavior could be maintained by lattice distortion of the CDW phase,even if band structures deviate from the electron-driven CDW scenario.Our work provides a constraint for understanding the CDW mechanism in TiSe_(2),and highlights the role of lattice distortion in the band-folding effect.展开更多
Taking advantage of the unique layered structure of TiSe2,the intrinsic electronic properties of two-dimensional materials can easily be tuned via heteroatomic engineering.Herein,we show that the charge density wave(C...Taking advantage of the unique layered structure of TiSe2,the intrinsic electronic properties of two-dimensional materials can easily be tuned via heteroatomic engineering.Herein,we show that the charge density wave(CDW)phase in 1T-TiSe_(2) single-crystals can be gradually suppressed through Sn atoms intercalation.Using angle-resolved photoemission spectroscopy(ARPES)and temperature-dependent resistivity measurements,this work reveals that Sn atoms can induce charge doping and modulate the intrinsic electronic properties in the host 1T-TiSe_(2).Notably,our temperature-dependent ARPES results highlight the role exciton-phonon interaction and the Jahn-Teller mechanism through the formation of backfolded bands and exhibition of a downward Se shift of 4p valence band in the formation of CDW in this material.展开更多
The two-dimensional(2 D)structure often leads to unusual phenomena for the impact of confined mean free path of carrier scattering.As a quasi-2 D layered material,Ag CrSe_(2)has a liquid-like phonon behavior for its u...The two-dimensional(2 D)structure often leads to unusual phenomena for the impact of confined mean free path of carrier scattering.As a quasi-2 D layered material,Ag CrSe_(2)has a liquid-like phonon behavior for its unstable Ag atoms at service temperature,leading to the promising candidate for thermoelectricity and fast ionic conductor.However,the inferior electronic performance constrains its application prospects as a functional semiconductor,which provides broad opportunity to tune its electric behaviors by defect chemistry.In this work,we revealed abundant electric transport behaviors of Ag CrSe_(2)with different types of intrinsic defects.For example,the Ag CrSe_(2)changes from Anderson insulator to metal when Se defects become prevailing and the magnetoresistance alters its sign depending on the relative ratio of Ag and Cr defects.Our results reported here can give salutary boosting on regulating the electric properties of ternary transition metal selenide by defect chemistry.展开更多
基金the National Key R&D Program of China(Grant No.2022YFA1403700)the National Natural Science Foundation of China(Grant Nos.12074163 and 12004030)+5 种基金the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2022B1515020046,2022B1515130005,2021B1515130007,and 2020B1515120100)the Guangdong Innovative and Entrepreneurial Research Team Program(Grant Nos.2017ZT07C062 and 2019ZT08C044)the Shenzhen Science and Technology Program(Grant No.KQTD20190929173815000)Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices(Grant No.ZDSYS20190902092905285)the Shenzhen Fundamental Research Program(Grant No.JCYJ20220818100405013)China Postdoctoral Science Foundation(Grant No.2020M682780 and 2022M711495)。
文摘The simple kagome-lattice band structure possesses Dirac cones,flat band,and saddle point with van Hove singularities in the electronic density of states,facilitating the emergence of various electronic orders.Here we report a titanium-based kagome metal CsTi_(3)Bi_(5)where titanium atoms form a kagome network,resembling its isostructural compound CsV_3Sb_5.Thermodynamic properties including the magnetization,resistance,and heat capacity reveal the conventional Fermi liquid behavior in the kagome metal CsTi_(3)Bi_(5)and no signature of superconducting or charge density wave(CDW)transition anomaly down to 85 m K.Systematic angle-resolved photoemission spectroscopy measurements reveal multiple bands crossing the Fermi level,consistent with the first-principles calculations.The flat band formed by the destructive interference of hopping in the kagome lattice is observed directly.Compared to Cs V_(3)Sb_(5),the van Hove singularities are pushed far away above the Fermi level in CsTi_(3)Bi_(5),in line with the absence of CDW.Furthermore,the first-principles calculations identify the nontrivial Z_(2)topological properties for those bands crossing the Fermi level,accompanied by several local band inversions.Our results suppose CsTi_(3)Bi_(5)as a complementary platform to explore the superconductivity and nontrivial band topology.
基金supported by the National Key R&D Program of China (Grant No.2017YFA0402901)the National Natural Science Foundation of China (Grant No.U2032153)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No.XDB25000000)the Users with Excellence Program of Hefei Science Center of the Chinese Academy of Sciences (Grant No.2021HSC-UE004)。
文摘Recently discovered kagome metals AV_(3)Sb_(5)(A=K,Rb,and Cs)provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism,with the combination of angle-resolved photoemission spectroscopy(ARPES)measurements and density functional theory calculations,we investigate how band dispersions change with the increase of lattice distortions.In particular,we focus on the electronic states around M point,where the van Hove singularities are expected to play crucial roles in the CDW transition.Previous ARPES studies reported a spectral weight splitting of the van Hove singularity around M point,which is associated with the 3D lattice modulations.Our studies reveal that this“splitting”can be connected to the two van Hove singularities at k_(z)=0 and k_(z)=π/c in the normal states.When the electronic system enters into the CDW state,both van Hove singularities move down.Such novel properties are important for understanding of the CDW transition.
文摘In our most recently published article,[1]an important reference[2]predicting CsTi_(3)Bi_(5) is missing and should be added,along with Ref.[3](originally Ref.[28]),to the introduction section.
基金supported by the National Key R&D Program of China (Grant No. 2017YFA0402901)the National Natural Science Foundation of China (Grant No. U2032153)+2 种基金the International Partnership Program (Grant No. 211134KYSB20190063)the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB25000000)the USTC Research Funds of the Double First-Class Initiative (Grant No. YD2310002004)。
文摘Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.
基金support from the National Key R&D Program of China(No.2017YFA0402901)the National Natural Science Foundation of China(Nos.U2032153,21727801,and 11621063)+2 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB25000000)the International Partnership Program of Chinese Academy of Sciences(CAS)(No.211134KYSB20190063)the Collaborative Innovation Program of Hefei Science Center of CAS(No.2019HSC-CIP007).
文摘Charge density wave(CDW)is a phenomenon that occurs in materials,accompanied by changes in their intrinsic electronic properties.The study of CDW and its modulation in materials holds tremendous significance in materials research,as it provides a unique approach to controlling the electronic properties of materials.TiSe_(2) is a typical layered material with a CDW phase at low temperatures.Through V substitution for Ti in TiSe_(2),we tuned the carrier concentration in V_(x)Ti_(1-x)Se_(2) to study how its electronic structures evolve.Angle-resolved photoemission spectroscopy(ARPES)shows that the band-folding effect is sustained with the doping level up to 10%,indicating the persistence of the CDW phase,even though the band structure is strikingly different from that of the parent compound TiSe_(2).Though CDW can induce the band fold effect with a driving force from the perspective of electronic systems,our studies suggest that this behavior could be maintained by lattice distortion of the CDW phase,even if band structures deviate from the electron-driven CDW scenario.Our work provides a constraint for understanding the CDW mechanism in TiSe_(2),and highlights the role of lattice distortion in the band-folding effect.
基金supported by the National Key Research and Development Program of China (2017YFA0305400, 2017YFA0304600, 2018YFA0307100, and 2018YFA0305603)the National Natural Science Foundation of China (11774190, 11674229, 11634009, 11774427, 51788104, and 11874035)+1 种基金EPSRC Platform Grant (EP/M020517/1)the support from the Shanghai Pujiang Program (17PJ1406200)。
基金the National Key R&D Program of China(Nos.2020YFA0405800 and 2017YFA0303500)the National Natural Science Foundation of China(NSFC)(Nos.U1932201,and 21727801)+2 种基金the International Partnership Program of The Chinese Academy of Sciences(CAS)(No.211134KYSB20190063)the CAS Collaborative Innovation Program of Hefei Science Center(No.2019HSC-CIP002)the University Synergy Innovation Program of Anhui Province(No.GXXT-2020-002)。
文摘Taking advantage of the unique layered structure of TiSe2,the intrinsic electronic properties of two-dimensional materials can easily be tuned via heteroatomic engineering.Herein,we show that the charge density wave(CDW)phase in 1T-TiSe_(2) single-crystals can be gradually suppressed through Sn atoms intercalation.Using angle-resolved photoemission spectroscopy(ARPES)and temperature-dependent resistivity measurements,this work reveals that Sn atoms can induce charge doping and modulate the intrinsic electronic properties in the host 1T-TiSe_(2).Notably,our temperature-dependent ARPES results highlight the role exciton-phonon interaction and the Jahn-Teller mechanism through the formation of backfolded bands and exhibition of a downward Se shift of 4p valence band in the formation of CDW in this material.
基金supported by the National Natural Science Foundation of China(11888101 and 11534010)Anhui Initiative in Quantum Information Technologies(AHY160000)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(XDB25000000)the National Key Research and Development Program of the Ministry of Science and Technology of China(2016YFA0300201 and 2017YFA0303001)the Key Research Program of Frontier Sciences,CAS,China(QYZDYSSW-SLH021).
基金supported by the National Natural Science Foundation of China(U1832142)the National Key R&D Program of China(2018YFB0703602)+3 种基金the Youth Innovation Promotion Association CAS(Y202092)the Fundamental Research Funds for the Central University(WK2340000094)China Postdoctoral Science Foundation(2019TQ0293,2020M671868)the National Synchrotron Radiation Laboratory Joint funds of University of Science and Technology of China(KY2340000114)。
文摘The two-dimensional(2 D)structure often leads to unusual phenomena for the impact of confined mean free path of carrier scattering.As a quasi-2 D layered material,Ag CrSe_(2)has a liquid-like phonon behavior for its unstable Ag atoms at service temperature,leading to the promising candidate for thermoelectricity and fast ionic conductor.However,the inferior electronic performance constrains its application prospects as a functional semiconductor,which provides broad opportunity to tune its electric behaviors by defect chemistry.In this work,we revealed abundant electric transport behaviors of Ag CrSe_(2)with different types of intrinsic defects.For example,the Ag CrSe_(2)changes from Anderson insulator to metal when Se defects become prevailing and the magnetoresistance alters its sign depending on the relative ratio of Ag and Cr defects.Our results reported here can give salutary boosting on regulating the electric properties of ternary transition metal selenide by defect chemistry.
