The Cu_2MoS_4 nanoparticles were prepared using a relatively simple and convenient solid-phase process, which was applied for the first time. The crystalline structure, morphology, and optical properties of Cu_2MoS_4 ...The Cu_2MoS_4 nanoparticles were prepared using a relatively simple and convenient solid-phase process, which was applied for the first time. The crystalline structure, morphology, and optical properties of Cu_2MoS_4 nanoparticles were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and UV-vis spectrophotometry. Cu_2MoS_4 nanoparticles having a band gap of 1.66 eV exhibits good photocatalytic activity in the degradation of methylene blue, which indicates that this simple process may be critical to facilitate the cheap production of photocatalysts.展开更多
Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and ele...Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.展开更多
基金financially supported by the Fundamental Research Funds for the Central Universities (No. FRF-BD-15-004A)
文摘The Cu_2MoS_4 nanoparticles were prepared using a relatively simple and convenient solid-phase process, which was applied for the first time. The crystalline structure, morphology, and optical properties of Cu_2MoS_4 nanoparticles were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and UV-vis spectrophotometry. Cu_2MoS_4 nanoparticles having a band gap of 1.66 eV exhibits good photocatalytic activity in the degradation of methylene blue, which indicates that this simple process may be critical to facilitate the cheap production of photocatalysts.
基金financially supported by the National Natural Science Foundation of China (No. 51571010)
文摘Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A ＂blue shift＂ of UV absorption edge is observed with the increase of working press ure.
