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Iodine-assisted ultrafast growth of high-quality monolayer MoS_(2) with sulfur-terminated edges
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作者 Qinke Wu Jialiang Zhang +14 位作者 Lei Tang Usman Khan Huiyu Nong shilong zhao Yujie Sun Rongxu Zheng Rongjie Zhang Jingwei Wang Junyang Tan Qiangmin Yu Liqiong He Shisheng Li Xiaolong Zou Hui-Ming Cheng Bilu Liu 《National Science Open》 2023年第4期43-54,共12页
Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D... Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors.Here,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces dramatically.The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within seconds.This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality,which will promote their applications. 展开更多
关键词 2D semiconductors molybdenum disulfides ultrafast growth defect density sulfur vacancy iodine-assisted sulfur-terminated edge
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双金属源制备具有有序阳离子空位的非层状二维金属硫化物 被引量:2
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作者 谭隽阳 张宗腾 +16 位作者 曾圣锋 李晟楠 王经纬 郑荣戌 侯福臣 魏印平 孙宇杰 张荣杰 赵仕龙 农慧雨 陈文骏 干林 邹小龙 赵悦 林君浩 刘碧录 成会明 《Science Bulletin》 SCIE EI CAS CSCD 2022年第16期1649-1658,M0004,共11页
二维(2D)过渡金属硫族化合物(TMC)在纳米电子学和能源等领域中有广泛的应用前景.其中,非层状TMC由于表面不饱和悬挂键以及强大的层内和层间化学键使其2D生长极具挑战,限制了极限厚度下的物性探究.本文提出了一种普适的双金属源生长方法... 二维(2D)过渡金属硫族化合物(TMC)在纳米电子学和能源等领域中有广泛的应用前景.其中,非层状TMC由于表面不饱和悬挂键以及强大的层内和层间化学键使其2D生长极具挑战,限制了极限厚度下的物性探究.本文提出了一种普适的双金属源生长方法,利用金属及其氯化物的混合物作为金属前驱体,实现了非层状2D TMC的可控生长.以六方Fe_(1-x)S为例,Fe_(1-x)S纳米片的厚度薄至3 nm,横向尺寸超过100μm.与MoS_(2)这类层状TMC(阴离子空位占主导)不同的是,本研究在Fe_(1-x)S中发现了有序阳离子Fe空位.低温输运测试和理论计算结果表明,2D Fe_(1-x)S是一种稳定的窄带隙半导体,其带隙宽度约为60 meV.除Fe_(1-x)S外,该方法还可用于生长其他多种具有有序阳离子空位的非层状2D TMC,包括Fe_(1-x)Se,Co_(1-x)S,Cr_(1-x)S和V_(1-x)S.本工作为非层状材料在2D厚度极限下的生长和物性表征铺平了道路. 展开更多
关键词 纳米电子学 双金属 非层状材料 可控生长 悬挂键 过渡金属硫族化合物 金属硫化物 横向尺寸
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Sintering Behavior and Microwave Dielectric Properties of MgTiO_3 Ceramics Doped with B_2O_3 by Sol-Gel Method 被引量:2
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作者 Huanping Wang Qinghua Yang +3 位作者 Denghao Li Lihui Huang shilong zhao Shiqing Xu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2012年第8期751-755,共5页
The B2O3-doped MgTiO3 powders and ceramics have been prepared by sol-gel method using Mg(NO3)2-6H2O, Ti(C4H9O)4 and H3BO3 as the starting materials. The sintering behavior and microwave dielectric properties of ce... The B2O3-doped MgTiO3 powders and ceramics have been prepared by sol-gel method using Mg(NO3)2-6H2O, Ti(C4H9O)4 and H3BO3 as the starting materials. The sintering behavior and microwave dielectric properties of ceramics prepared from powders with different particle sizes were investigated. The gels were calcined at 650, 700, 750, 800, 850 and 900 ℃ and the derived particle sizes of powders were 20-30 nm, 30-40 nm, 40-60 nm, 60-90 nm, 90-120 nm and 120-150 nm, respectively. The nanoparticles with the size of 30-60 nm benefited the sintering process with high surface energy whereas nanoparticles with the size of 20-30 nm damaged the microwave dielectric properties due to the pores in the ceramics. The addition of B203 used as a liquid sintering aid reduced the sintering temperature of MgTiO3 ceramic, which was supposed to enter the MgTi03 lattice and resulted in the formation of (MgTi)2(BO3)O phase. The B203-doped MgTiO3 ceramic sintered at 1100℃ and prepared from the nanoparticles of 40-60 nm had compact structure and exhibited good microwave dielectric properties: εr=17.63, Q x f=33,768 GHz and Tf=-48X 10-6 ℃-1. 展开更多
关键词 MgTiO3 ceramic B2O3 addition SOL-GEL Dielectric properties
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Effect of Li+ ion concentration on upconversion emission and temperature sensing behavior of La2O3:Er3+ phosphors 被引量:4
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作者 Guangrun Chen Ruoshan Lei +4 位作者 Shiqing Xu Huanping Wang shilong zhao Feifei Huang Yin Tian 《Journal of Rare Earths》 SCIE EI CAS CSCD 2018年第2期119-124,共6页
The effects of Li~+ co-doping concentration on the structure, upconversion luminescence and temperature sensing behavior of Er^(3+):La_2O_3 phosphors were investigated. X-ray diffraction and scanning electron mic... The effects of Li~+ co-doping concentration on the structure, upconversion luminescence and temperature sensing behavior of Er^(3+):La_2O_3 phosphors were investigated. X-ray diffraction and scanning electron microscopy observations reveal that Li~+ ion co-doping can change the lattice parameter of La_2O_3 host and increase the particle size of the samples. The optical investigation shows that co-doping of Li~+ ions can enhance the upconversion emission of Er^(3+) ions in La_2O_3 matrix effectively. Most importantly, the temperature sensing sensitivity of the samples is found to be dependent on Li~+ co-doping concentration,when the emission intensity ratio of the(~2H_(11/2)→~4 I_(15/2)) and(~4 S_(3/2)→~4 I_(15/2)) transitions of Er^(3+) is chosen as the thermometric index. Both of the optimum upconversion luminescence and temperature sensing sensitivity are obtained for 7 mol% Li~+ co-doped sample. When the Li~+ concentration is beyond 7 mol%,both the quenching in upconversion intensity and the degradation of temperature sensitivity are observed, which may be due to the serious distortion in local crystal field around Er^(3+) ions caused by the excess Li~+ ions. 展开更多
关键词 Gel combustion method Rare-earth La2O3:Er3+/Li+ Upconversion photoluminescence Temperature sensing
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金基底引导制备二维黑磷及其生长机理
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作者 后羿 冯思敏 +2 位作者 赵仕龙 刘明强 刘碧录 《科学通报》 EI CAS CSCD 北大核心 2021年第26期3480-3487,共8页
二维材料是近年来材料科学和凝聚态物理学的前沿研究方向.在众多的二维材料中,黑磷(black phosphorus,BP)因其独特的带隙、优异的光学和电学性质、各向异性等特性而受到研究人员的广泛关注.如何可控制备二维薄层BP是该领域的难题之一.... 二维材料是近年来材料科学和凝聚态物理学的前沿研究方向.在众多的二维材料中,黑磷(black phosphorus,BP)因其独特的带隙、优异的光学和电学性质、各向异性等特性而受到研究人员的广泛关注.如何可控制备二维薄层BP是该领域的难题之一.本工作系统研究了基底对BP生长的影响,结果表明金基底对BP的生长具有重要促进作用.在此基础上,使用镀有金薄膜的硅基底为生长衬底,通过设计限域生长空间和调控温度梯度,在全新的生长体系中实现了BP纳米片的直接生长,并探讨了其生长机理.本研究所报道的结果为实现二维薄层BP的制备提供了一条新思路. 展开更多
关键词 二维材料 薄层黑磷 化学气相输运 金基底 限域空间 温度梯度
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单层过渡金属硫族化合物中氧取代激活的光致发光增强
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作者 赵仕龙 谭隽阳 +6 位作者 柯丞轩 冯思敏 赖泳爵 丁宝福 罗光富 林君浩 刘碧录 《Science China Materials》 SCIE EI CAS CSCD 2022年第4期1034-1041,共8页
具有原子层厚度的过渡金属硫族化合物(TMDCs)是一种适用于光子和光电子领域的新颖的半导体材料,而增强其光致发光(PL)特性对于这类材料的光学应用至关重要.尽管研究人员做了大量的工作来增强单层TMDCs的PL特性,但微观结构和PL效率之间... 具有原子层厚度的过渡金属硫族化合物(TMDCs)是一种适用于光子和光电子领域的新颖的半导体材料,而增强其光致发光(PL)特性对于这类材料的光学应用至关重要.尽管研究人员做了大量的工作来增强单层TMDCs的PL特性,但微观结构和PL效率之间的复杂关系阻碍了对其性质的调控.本文中,我们证实了在激光辐照下,单层TMDC的PL强度在经过一个预激活的平台后可以增强近一个数量级且半峰宽变窄约20%.实验和理论研究表明,低功率的激光辐照能够在WS_(2)中产生许多硫空位簇,这些硫空位簇随后被氧取代并显著增强其PL.这种PL增强的现象在其他单层TMDC材料中有普适性,有利于TMDC在光学领域的应用. 展开更多
关键词 two-dimensional materials transition metal dichalcogenides photoluminescence enhancement LASER OXYGEN
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Upconversion luminescence, intrinsic optical bistability,and optical thermometry in Ho3+/Yb3+: BaMoO4 phosphors
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作者 刘鑫 雷若姗 +4 位作者 黄飞飞 邓德刚 王焕平 赵士龙 徐时清 《Chinese Optics Letters》 SCIE EI CAS CSCD 2019年第11期61-64,共4页
Ho^3+/Yb^3+: BaMoO4 phosphors with different concentrations were fabricated by a gel combustion method.The upconversion(UC) luminescence, intrinsic optical bistability, and the corresponding mechanisms were reported f... Ho^3+/Yb^3+: BaMoO4 phosphors with different concentrations were fabricated by a gel combustion method.The upconversion(UC) luminescence, intrinsic optical bistability, and the corresponding mechanisms were reported for the present system. The optical thermometric properties based on red(^5F5→^5I8) and green(^5F4/^5S2→^5I8) emissions were studied. The sensing sensitivities could be tuned by manipulating the cooperative energy transfer process. The highest absolute sensitivity was 99 × 10^-4 K^-1 at 573 K, which is larger than that of many previous UC materials. 展开更多
关键词 materials. process. method.
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