Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor ...Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor as both artificial neuron and synapse still requires intensive research in detail.In this work,Ag/SrTiO_(3)(STO)/Pt memristor with low operating voltage is manufactured and reconfigurable as both neuron and synapse for neuromorphic computing chip.By modulating the compliance current,two types of resistance switching,volatile and nonvolatile,can be obtained in amorphous STO thin film.This is attributed to the manipulation of the Ag conductive filament.Furthermore,through regulating electrical pulses and designing bionic circuits,the neuronal functions of leaky integrate and fire,as well as synaptic biomimicry with spike-timing-dependent plasticity and paired-pulse facilitation neural regulation,are successfully realized.This study shows that the reconfigurable devices based on STO thin film are promising for the application of neuromorphic computing systems.展开更多
Biologically inspired neuromorphic sensory memory systems based on memristor have received a lot of attention in the booming artificial intelligence industry due to significant potential to effectively process multi-s...Biologically inspired neuromorphic sensory memory systems based on memristor have received a lot of attention in the booming artificial intelligence industry due to significant potential to effectively process multi-sensory signals from complex external environments.However,many memristors have significant switching parameters disperse,which is a great challenge for using memristors in bionic neuromorphic sensory memory systems.Herein,a stable ferroelectric memristor based on the Pd/BaTiO_(3):Eu2O_(3)/La0.67Sr0.33MnO_(3)grown on Silicon structure with SrTiO_(3)as buffer layer is presented.The device possesses low coercive field voltage(-1.3-2.1 V)and robust endurance characteristic(~10^(10)cycles)through optimizing the growth temperature.More importantly,an ultra-stable artificial multimodal sensory memory system with visual and tactile functions was reported for the first time by combining a pressure sensor,a photosensitive sensor,and a robotic arm.Utilizing the above system,the sensitivity value of the system is expressed by the conductance of the memristor to realize the gradual change of external stimulus,and multi signals inputs at the same time to this system have faithfully achieved sensory adaptation to multimodal sensors.This work paves the way for future development of memristor-based perception systems in efficient multisensory neural robots.展开更多
基金supported by the National Key R&D Program of China (Grant No.2018AAA0103300)the National Key R&D Plan“Nano Frontier”Key Special Project (Grant No.2021YFA1200502)+13 种基金the Cultivation Projects of National Major R&D Project (Grant No.92164109)the National Natural Science Foundation of China (Grant Nos.61874158,62004056,and 62104058)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences (Grant No.XDB44000000-7)Hebei Basic Research Special Key Project (Grant No.F2021201045)the Support Program for the Top Young Talents of Hebei Province (Grant No.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (Grant No.SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University (No.DXK202101)Institute of Life Sciences and Green Development (No.521100311)the Natural Science Foundation of Hebei Province (Nos.F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation team of Hebei University (Grant No.605020521001)Special Support Funds for National High Level Talents (Grant No.041500120001)High-level Talent Research Startup Project of Hebei University (Grant No.521000981426)the Science and Technology Project of Hebei Education Department (Grant Nos.QN2020178 and QN2021026)Baoding Science and Technology Plan Project (Nos.2172P011 and 2272P014).
文摘Neuromorphic computing aims to achieve artificial intelligence by mimicking the mechanisms of biological neurons and synapses that make up the human brain.However,the possibility of using one reconfigurable memristor as both artificial neuron and synapse still requires intensive research in detail.In this work,Ag/SrTiO_(3)(STO)/Pt memristor with low operating voltage is manufactured and reconfigurable as both neuron and synapse for neuromorphic computing chip.By modulating the compliance current,two types of resistance switching,volatile and nonvolatile,can be obtained in amorphous STO thin film.This is attributed to the manipulation of the Ag conductive filament.Furthermore,through regulating electrical pulses and designing bionic circuits,the neuronal functions of leaky integrate and fire,as well as synaptic biomimicry with spike-timing-dependent plasticity and paired-pulse facilitation neural regulation,are successfully realized.This study shows that the reconfigurable devices based on STO thin film are promising for the application of neuromorphic computing systems.
基金supported by the National Key R&D Plan“nano frontier”Key Special Project(grant no.2021YFA1200502)Cultivation projects of national major R&D project(grant no.92164109)+14 种基金National Natural Science Foundation of China(grant nos.61874158,62004056,and 62104058)Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(grant no.XDB440000007)Hebei Basic Research Special Key Project(grant no.F2021201045)the Support Program for the Top Young Talents of Hebei Province(Grant no.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(grant no.SLRC2019018)Interdisciplinary Research Program of Natural Science of Hebei University(DXK202101)Institute of Life Sciences and Green Development(521100311)Outstanding Young Scientific Research and Innovation Team of Hebei University(grant no.605020521001)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)Special Support Funds for National High Level Talents(grant no.041500120001)the Advanced Talents Incubation Program of the Hebei University(521000981426,521100221071,and 521000981363)funded by Science and Technology Project of Hebei Education Department(grant nos.QN2020178 and QN2021026)Baoding Science and Technology Plan Project(2172P011 and 2272P014)Hebei Youth Fund Project(A2021201048)Post-graduate's Innovation Fund Project of Hebei Province(CXZZSS2023001).
文摘Biologically inspired neuromorphic sensory memory systems based on memristor have received a lot of attention in the booming artificial intelligence industry due to significant potential to effectively process multi-sensory signals from complex external environments.However,many memristors have significant switching parameters disperse,which is a great challenge for using memristors in bionic neuromorphic sensory memory systems.Herein,a stable ferroelectric memristor based on the Pd/BaTiO_(3):Eu2O_(3)/La0.67Sr0.33MnO_(3)grown on Silicon structure with SrTiO_(3)as buffer layer is presented.The device possesses low coercive field voltage(-1.3-2.1 V)and robust endurance characteristic(~10^(10)cycles)through optimizing the growth temperature.More importantly,an ultra-stable artificial multimodal sensory memory system with visual and tactile functions was reported for the first time by combining a pressure sensor,a photosensitive sensor,and a robotic arm.Utilizing the above system,the sensitivity value of the system is expressed by the conductance of the memristor to realize the gradual change of external stimulus,and multi signals inputs at the same time to this system have faithfully achieved sensory adaptation to multimodal sensors.This work paves the way for future development of memristor-based perception systems in efficient multisensory neural robots.