The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga_(2)O_(3)/black phosphorous heterostructureMOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include ...The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga_(2)O_(3)/black phosphorous heterostructureMOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance(gm) gate dependent intrinsic-capacitances (Cgd and Cgs), cutoff frequency (fT), gain bandwidth (GBW) product and output-conductance(gd). Similarly, power-gain (Gp), power added efficiency (PAE), and output power (POUT) are also investigated for largesignalcontinuous-wave (CW) RF performance evaluation. The motive behind the study is to improve the β-Ga_(2)O_(3) MOS deviceperformance along with a reduction in power losses and device associated leakages. To show the applicability of the designeddevice in RF applications, its RF FOMs are analyzed. With the outline characteristics of the ultrathin black phosphorous layer belowthe β-Ga_(2)O_(3) channel region, the proposed device results in 1.09 times improvement in fT, with 0.7 times lower Cgs, and 3.27dB improved GP in comparison to the NiO-GO MOSFET. The results indicate that the designed NiO-GO/BP MOSFET has betterRF performance with improved power gain and low leakages.展开更多
文摘The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga_(2)O_(3)/black phosphorous heterostructureMOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance(gm) gate dependent intrinsic-capacitances (Cgd and Cgs), cutoff frequency (fT), gain bandwidth (GBW) product and output-conductance(gd). Similarly, power-gain (Gp), power added efficiency (PAE), and output power (POUT) are also investigated for largesignalcontinuous-wave (CW) RF performance evaluation. The motive behind the study is to improve the β-Ga_(2)O_(3) MOS deviceperformance along with a reduction in power losses and device associated leakages. To show the applicability of the designeddevice in RF applications, its RF FOMs are analyzed. With the outline characteristics of the ultrathin black phosphorous layer belowthe β-Ga_(2)O_(3) channel region, the proposed device results in 1.09 times improvement in fT, with 0.7 times lower Cgs, and 3.27dB improved GP in comparison to the NiO-GO MOSFET. The results indicate that the designed NiO-GO/BP MOSFET has betterRF performance with improved power gain and low leakages.
