Atomically thin two-dimensional(2D)transition metal dichalcogenides(TMDCs)have stimulated enormous research interest due to rich phase structure,high theoretical carrier mobility and layer-dependent bandgap.In view of...Atomically thin two-dimensional(2D)transition metal dichalcogenides(TMDCs)have stimulated enormous research interest due to rich phase structure,high theoretical carrier mobility and layer-dependent bandgap.In view of the close correlation between defects and properties in 2D TMDCs,more attentions have been paid on the defect engineering in recent years,however the mechanism is still unclear.Herein,we review the critical progress of defect engineering and provide an extensive way to modulate the properties depressed by defects.To insight into the defect engineering,we firstly introduce two common kinds of defects during the growth progress of TMDCs and the possible distribution of energy levels those defects could induce.Then,various methods to improve point defects and grain boundaries during the period of growth are discussed intensively,with the assistance of which more large-area TMDCs films can be obtained.Considering the defects in TMDCs are inevitable regardless of concentration,we also highlight strategies to heal the defects after growth.Through dry methods or wet methods,the chalcogen vacancies can be repaired and thus,the performance of electronic device would be significantly enhanced.Finally,we propose the challenges and prospective for defect engineering in 2D TMDCs materials to support the optimization of device and lead them to wide applied fields.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52002254 and 52272160)the Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2023YFSY0002,and 2022YFS0045)+1 种基金the Chunhui Plan of the Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Open-Foundation of Key Laboratory of Laser Device Technology,China North Industries Group Corporation Limited(Grant No.KLLDT202104).
文摘Atomically thin two-dimensional(2D)transition metal dichalcogenides(TMDCs)have stimulated enormous research interest due to rich phase structure,high theoretical carrier mobility and layer-dependent bandgap.In view of the close correlation between defects and properties in 2D TMDCs,more attentions have been paid on the defect engineering in recent years,however the mechanism is still unclear.Herein,we review the critical progress of defect engineering and provide an extensive way to modulate the properties depressed by defects.To insight into the defect engineering,we firstly introduce two common kinds of defects during the growth progress of TMDCs and the possible distribution of energy levels those defects could induce.Then,various methods to improve point defects and grain boundaries during the period of growth are discussed intensively,with the assistance of which more large-area TMDCs films can be obtained.Considering the defects in TMDCs are inevitable regardless of concentration,we also highlight strategies to heal the defects after growth.Through dry methods or wet methods,the chalcogen vacancies can be repaired and thus,the performance of electronic device would be significantly enhanced.Finally,we propose the challenges and prospective for defect engineering in 2D TMDCs materials to support the optimization of device and lead them to wide applied fields.
