Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable cl...Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.展开更多
The highly ordered film assembled by regularly 1D nanostructures has potentialprospects in electronic,photoelectronic and other fields because of its excellentlight-trapping effect and electronic transport property.Ho...The highly ordered film assembled by regularly 1D nanostructures has potentialprospects in electronic,photoelectronic and other fields because of its excellentlight-trapping effect and electronic transport property.However,the controlledgrowth of highly ordered film remains a great challenge.Herein,large-area andhighly ordered Bi_(2)S_(3)film is synthesized on fluorophlogopite mica substrate bychemical vapor deposition method.The Bi2S3 film features hollowed-outcrosslinked network structure,assembled by 1D nanobelts that regularly distributein three orientations,which agrees well with the first principles calculations.Based on the as-grown Bi_(2)S_(3)film,the broadband photodetector with a responserange from 365 to 940 nm is fabricated,exhibiting a maximum responsivity upto 98.51 mA W^(–1),specific detectivity of 2.03×10^(10)Jones and fast response timeof 35.19 ms.The stable instantaneous on/off behavior for 500 cycles and reliablephotoresponse characteristics of the Bi_(2)S_(3)photodetector after storage in air for6 months confirm its excellent long-term stability and air stability.Significantly,as sensing pixel and signal receiving terminal,the device successfully achieveshigh-resolution imaging of characters of“H”,“I”and“T”,and secure transmissionof confidential information.This work shows a great potential of the largeareaand highly ordered Bi_(2)S_(3)film toward the development of future multiplefunctional photoelectronic applications.展开更多
基金support from the National Key R&D Program of China(No.2019YFA0705201)the National Natural Science Foundation of China(No.62174042)the Heilongjiang Touyan Team.
文摘Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22×10^(10) Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi_(2)Se_(3)/a-Ga_(2)O_(3)/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.
基金National Key Research and Development Program of China,Grant/Award Number:2019YFA0705201National Natural Science Foundation of China,Grant/Award Number:12074095+1 种基金Natural Science Foundation of Heilongjiang Province of China,Grant/Award Number:LH2020E033Heilongjiang Touyan Team。
文摘The highly ordered film assembled by regularly 1D nanostructures has potentialprospects in electronic,photoelectronic and other fields because of its excellentlight-trapping effect and electronic transport property.However,the controlledgrowth of highly ordered film remains a great challenge.Herein,large-area andhighly ordered Bi_(2)S_(3)film is synthesized on fluorophlogopite mica substrate bychemical vapor deposition method.The Bi2S3 film features hollowed-outcrosslinked network structure,assembled by 1D nanobelts that regularly distributein three orientations,which agrees well with the first principles calculations.Based on the as-grown Bi_(2)S_(3)film,the broadband photodetector with a responserange from 365 to 940 nm is fabricated,exhibiting a maximum responsivity upto 98.51 mA W^(–1),specific detectivity of 2.03×10^(10)Jones and fast response timeof 35.19 ms.The stable instantaneous on/off behavior for 500 cycles and reliablephotoresponse characteristics of the Bi_(2)S_(3)photodetector after storage in air for6 months confirm its excellent long-term stability and air stability.Significantly,as sensing pixel and signal receiving terminal,the device successfully achieveshigh-resolution imaging of characters of“H”,“I”and“T”,and secure transmissionof confidential information.This work shows a great potential of the largeareaand highly ordered Bi_(2)S_(3)film toward the development of future multiplefunctional photoelectronic applications.
