This study reports a simple imprinting method for the fabrication of biomimetic moth-eye antireflective polymethyl methacrylate(PMMA)nanostructures on the surface of the substrate.The antireflection structured silicon...This study reports a simple imprinting method for the fabrication of biomimetic moth-eye antireflective polymethyl methacrylate(PMMA)nanostructures on the surface of the substrate.The antireflection structured silicon was obtained by Reactive Ion Etching(RIE)method.By using the antireflection structured silicon substrate as the imprinting stamp,the biomimetic moth-eye polymer structures showed tapered holes,whose depth and periodicity were around 780 nm and 580 nm,respectively.The reflectance of the resulting PMMA structures was reduced from 10% to less than 1% in the wavelength range from 300 nm to 1600 nm.This simple methodology can be scaled up via self-loading and nanoimprinting,which may have a promising application in optoelectronic devices and solar cells.展开更多
基金This work was supported by National Natural Science Foundation of China(No.51572058,51502057,51702068)National Key Research&Development Program(2016YFB0303903,2016YFE0201600)+3 种基金the International Science&Technology Cooperation Program of China(2013DFR10630,2015DFE52770)China Postdoctoral Science Foundation(No.2016M601427)Heilongjiang Province Postdoctoral Science Foundation(No.LBH-Z16080)Foundation of Equipment Development Department(6220914010901).
文摘This study reports a simple imprinting method for the fabrication of biomimetic moth-eye antireflective polymethyl methacrylate(PMMA)nanostructures on the surface of the substrate.The antireflection structured silicon was obtained by Reactive Ion Etching(RIE)method.By using the antireflection structured silicon substrate as the imprinting stamp,the biomimetic moth-eye polymer structures showed tapered holes,whose depth and periodicity were around 780 nm and 580 nm,respectively.The reflectance of the resulting PMMA structures was reduced from 10% to less than 1% in the wavelength range from 300 nm to 1600 nm.This simple methodology can be scaled up via self-loading and nanoimprinting,which may have a promising application in optoelectronic devices and solar cells.