Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing t...Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing techniques.The CIC substrate is a sandwich structure with a 10µm thick Copper(Cu)layer/30µm thick Invar layer/10µm thick Cu layer.The Invar layer was composed of Iron(Fe)and Nickel(Ni)with a proportion of 70:30.The thermal expansion coefcient of the composite CIC metal can match that of the GaAs substrate.It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking.At 1 mA current,the top-emitting VCSEL/GaAs and thin-flm VCSEL/CIC had a voltage of 1.39 and 1.37 V,respectively.The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW,respectively.The 50µm thick CIC substrate can play a good heat dissipation function,which results in improving the electrical and optical characteristics of thin flm VCSELs/CIC.The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs.The obtained data suggested that VCSELs on a composite metal substrate not only afected signifcantly the characteristics of thin film VCSEL,but also improved considerably the device thermal performance.展开更多
基金supported by the Science and Technology Council,Taiwan,China under the grants NSTC 109-2634-F-009-028,110-2224-E-A49-003,111-2634-F-A49-007,and 111-2218-E-A49-019-MBK,Ingentec Corp.and the Center for Emergent Functional Matter Science of Yang Ming Chiao Tung University from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project(Taiwan,China)funding and material measurement support(grant number:2022-T-018)and we thank Taiwan Semiconductor Research Institute for facilities supporting.
文摘Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing techniques.The CIC substrate is a sandwich structure with a 10µm thick Copper(Cu)layer/30µm thick Invar layer/10µm thick Cu layer.The Invar layer was composed of Iron(Fe)and Nickel(Ni)with a proportion of 70:30.The thermal expansion coefcient of the composite CIC metal can match that of the GaAs substrate.It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking.At 1 mA current,the top-emitting VCSEL/GaAs and thin-flm VCSEL/CIC had a voltage of 1.39 and 1.37 V,respectively.The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW,respectively.The 50µm thick CIC substrate can play a good heat dissipation function,which results in improving the electrical and optical characteristics of thin flm VCSELs/CIC.The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs.The obtained data suggested that VCSELs on a composite metal substrate not only afected signifcantly the characteristics of thin film VCSEL,but also improved considerably the device thermal performance.
