Researches and applications of Geographic Information Systems (GIS) in China started in the early 1980s. In the early period, the development of GIS was mainly depended on the progress and applications of remote sensi...Researches and applications of Geographic Information Systems (GIS) in China started in the early 1980s. In the early period, the development of GIS was mainly depended on the progress and applications of remote sensing, aerial photography, as well as computer aided design (CAD). In recent years, with the development of Global Positioning System(GPS) and Internet technology, GIS has being developed vigorously in the county. Looking ahead to the 21st century, a new era of “Digital Earth” and “Cyberspace” is coming, which will provide a great opportunity as well as a challenge to the China’s GIS circles.展开更多
The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at ...The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.展开更多
This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold ...This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.展开更多
文摘Researches and applications of Geographic Information Systems (GIS) in China started in the early 1980s. In the early period, the development of GIS was mainly depended on the progress and applications of remote sensing, aerial photography, as well as computer aided design (CAD). In recent years, with the development of Global Positioning System(GPS) and Internet technology, GIS has being developed vigorously in the county. Looking ahead to the 21st century, a new era of “Digital Earth” and “Cyberspace” is coming, which will provide a great opportunity as well as a challenge to the China’s GIS circles.
基金supported by the National Natural Science Foundation of China(No.61376099)the Foundation for Fundamental Research of China(No.JSZL2016110B003)the Major Fundamental Research Program of Shaanxi(No.2017ZDJC-26)
文摘The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.
基金supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007)the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)
文摘This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.
