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Magneto-transport properties of the off-stoichiometric Co_2MnAl film epitaxially grown on GaAs(001)
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作者 Zhifeng Yu Hailong Wang +2 位作者 Jialin Ma shucheng tong Jianhua Zhao 《Journal of Semiconductors》 EI CAS CSCD 2019年第5期51-54,共4页
We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs sub... We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^(3/2) and T^2 laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ~640 K. The intrinsic anomalous Hall conductivity of ~55 Ω^(-1) cm^(-1) is obtained, which is almost twenty times smaller than that of Co_2MnAl. 展开更多
关键词 full-Heusler alloy MAGNETO-TRANSPORT property activation model MOLECULAR-BEAM epitaxy
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