Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the opticalperformance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was...Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the opticalperformance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTAtreatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with theas-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at800 ℃. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treatedInAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL)and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.展开更多
In this article we consider the kth-order discrete delay survival red blood cells model. The general form of the discrete dynamical system is rewritten as Xn＋l = f（Pn,δn,xn,... ,xn＋1） where Pn,δn converge to the...In this article we consider the kth-order discrete delay survival red blood cells model. The general form of the discrete dynamical system is rewritten as Xn＋l = f（Pn,δn,xn,... ,xn＋1） where Pn,δn converge to the parametric values P and 6. We show that when the parameters are replaced by sequences, the stability results of the original system still hold.展开更多
基金This work was supported by the National Key Research and Development Program of China(Grant No.2016YFB0402404)the National Natural Science Foundation of China(Grant No.21972103)+1 种基金Key Research and Development Program of Shanxi Province(Grant No.201703D111026)the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009).
文摘Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the opticalperformance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTAtreatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with theas-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at800 ℃. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treatedInAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL)and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.
基金supported by the National Natural Science Foundation of China(11875032)the National Key R&D Program of China(2021YFB3200100)+1 种基金the Key R&D program of Shaanxi Province,China(2022JM-373 and 2021GY-221)the Youth Talent Invitation Scheme of Shaanxi Association for science and technology(20190506).
文摘In this article we consider the kth-order discrete delay survival red blood cells model. The general form of the discrete dynamical system is rewritten as Xn＋l = f（Pn,δn,xn,... ,xn＋1） where Pn,δn converge to the parametric values P and 6. We show that when the parameters are replaced by sequences, the stability results of the original system still hold.
