Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

Predictive Control Model Based on the MPC Algorithm on Three Different Road Sections

Predictive control is an advanced control algorithm,which is widely used in industrial process control.Among them,model predictive control(MPC)is an important branch of predictive control.Its basic principle is to use the system model to predict future behavior and determine the current control action by optimizing the objective function.This paper discusses the application of MPC in the prediction and control of the speed of vehicles to optimize traffic flow.It is a valuable reference for alleviating traffic congestion and improving travel efficiency and smoothness and provides scientific basis and technical support for future highway traffic management.

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Current laser-based display and lighting applications are invariably using blue laser diodes(LDs)grown on freestanding GaN substrates,which are costly and smaller in size compared with other substrate materials.1–3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride(InGaN/GaN)multiple quantum well(MQW)structure can substantially reduce the cost of blue LDs and boost their applications.To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure,a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si substrate.Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers(QBs)and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer.A continuous-wave(CW)electrically pumped InGaN/GaN quantum well(QW)blue(450 nm)LD grown on Si was successfully demonstrated at room temperature(RT)with a threshold current density of 7.8 kA/cm^(2).

Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

c-plane GaN-based blue laser diodes（LDs） were fabricated with Al-free cladding layers（CLs） and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern（FFP） of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.

Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

We have fabricated InGaN-based superluminescent diodes(SLDs)with one-sided oblique facet.The characteristics of the SLDs and laser diodes with the same cavity length(800 lm)were compared.The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 lm cavity length.The characteristics of the SLDs with different cavity length were also demonstrated in a comparative way.It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region.The lasing threshold current turns out to be higher for the shorter SLD(S-SLD)(400 lm),but the output light intensity of the longer SLD(800 lm)is higher than that of the S-SLD under the same current density.The gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm2.The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.

Enhanced NIR Luminescence of Nanozeolite L Loading Lanthanide β-Diketonate Complexes

Herein, we report the preparation of zeolite NIR luminescence materials with a remarkable increase of lumi- nescence intensity by attaching stopper molecule （an imidazolium salt） to the channel entrances of zeolite L loading with NIR lanthanide （Er3＋ or Nd3＋）β-diketonate complexes. This results from the formation of Ln3＋-β-diketonate complexes （Ln=Er or Nd） with high coordination numbers through the decreasing of the proton strength in the ze- olite channels. The obtained materials were characterized with SEM and photoluminescence spectroscopy. We be- lieve that this hybrid material will be an appealing candidate for the applications of optical fiber, telecommunica- tions and bio-imaging.

MultiTrans:Multi-scale feature fusion transformer with transfer learning strategy for multiple organs segmentation of head and neck CT images

Radiotherapy with precise segmentation of head and neck organs at risk(OARs)is one of the important treatment methods for head and neck cancer.In routine clinical practice,OARs are manually segmented by doctors to avoid irreversible adverse reactions caused by radiotherapy,which is time-consuming and laborious.To assist doctors in OARs segmentation,a MultiTrans framework with a multi-scale feature fusion module was proposed in this paper.In the multi-scale feature fusion module,the original image and the feature map of CNN were fused together to form a compound feature map for more complete high-resolution global information.In addition,the global information was also fully utilized in MultiTrans by using the feature map restored from the compound feature map in the skip connection.The multi-scale interactive high-resolution information can make full use of medical image information and obtain features more comprehensively,thus improve the segmentation accuracy.Experiments showed that MultiTrans had an average Dice score coefficient(DSC)of 74.01%in all organs,effectively improved segmentation accuracy.In addition,we proposed a transfer learning strategy for small organs by transferring the weight parameters of organs with a large amount of data to organs with a small amount of data to speed up the convergence of MultiTrans and reduce the demand for data volume in the MultiTrans.With this strategy,the average DSC of small organs was obviously increased,making the segmentation of small organs more accurate.The proposed framework and transfer learning strategy have the potential of assisting doctors in OARs delineation.

A new type of anionic surfactant with four carboxylates for the preparation of mesoporous materials

In this paper, a new type of anionic surfactant containing four carboxylates was synthesized by a four-step synthetic reaction including bromination reaction and primary amide protective reaction. Intermediates and final products of each step in the whole synthetic process were characterized by IH NMR and MS. Purification of the anionic surfactant was accomplished through combination of recrystallization and silica gel column chromatography. The structure and the critical micelle concentration （CMC） of this surfactant at different temperatures were also investigated. Unlike traditional mono- carboxylate surfactant easy to form lamellar mesostructure, this surfactant has the hexagonal mesophase structure and comparatively low CMC, hopefu.lly to be applied in the preparation of mesoporous metal oxides.