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Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator
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作者 shun-li jiang Tian-Yi jiang +8 位作者 Yong-Qiang Xu Rui Wu Tian-Yue Hao Shu-Kun Ye Ran-Ran Cai Bao-Chuan Wang Hai-Ou Li Gang Cao Guo-Ping Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第9期139-143,共5页
Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation.To satisfy the connectivity requirements and reduce the lithographic com... Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation.To satisfy the connectivity requirements and reduce the lithographic complexity,utilizing the qubit array structure and the circuit quantum electrodynamics(cQED)architecture together is expected to be a feasible scaling scheme.A triple-quantum dot(TQD)coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme.In this article,we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide(CPW)resonator.The TQD can couple to the resonator via the right double-quantum dot(RDQD),which reaches the strong coupling regime with a charge–photon coupling strength of g0/(2p)=175 MHz.Moreover,we illustrate the high tunability of the TQD through the characterization of stability diagrams,quadruple points(QPs),and the quantum cellular automata(QCA)process.Our results contribute to fostering the exploration of silicon-based qubit integration. 展开更多
关键词 triple-quantum DOT strong COUPLING circuit QUANTUM ELECTRODYNAMICS (cQED) scalable siliconbased cQED architectures
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