Gallium nitride high electron mobility transistor(GaN HEMT)devices have become critical components in the manufacturing of high-performance radio frequency(RF)or power electronic modules due to their superior characte...Gallium nitride high electron mobility transistor(GaN HEMT)devices have become critical components in the manufacturing of high-performance radio frequency(RF)or power electronic modules due to their superior characteristics,such as high electron saturation speeds and high power densities.However,the high heat characteristics of GaN HEMTs make device level cooling a critical problem to solve since performance degradation or even failure may occur under high temperatures.In this paper,we proposed a 2.5D integration method with devicelevel microchannel direct cooling for a high-power GaN HEMT device.To demonstrate this technological concept,a multigate GaN HEMT device featuring a gate length/width/source drain spacing of 0.5μm/300μm/6μm that underwent in-house backside thinning and metallization was used as the test vehicle.A high-resistivity silicon(HR Si)interposer embedded with four-layer microchannels was designed,having widths/pitches of 30μm/30μm at the top microchannel.The high-power GaN HEMT device was soldered on a Si interposer embedded with open microchannels for heat dissipation.A pair of GSG Pad chips was soldered simultaneously to display the capacity for the heterogeneous integration of other chip types.Thermal property evaluation was conducted with experiments and simulations.The test results showed that the maximum surface temperature of the GaN HEMT device decreased to 93.8°C when it experienced a heat dissipation density of 32 kW/cm^(2) in the gate finger area and an average heat dissipation density of 5 kW/cm^(2) was found in the active area with the DI water coolant at a flow rate of 3 mL/min.To our knowledge,among recently reported works,this finding was the best cooling capacity of heterogeneously integrated microchannels for GaN HEMT devices.In addition,this technology was scalable regarding the numbers of gate fingers or GaN HEMT devices.展开更多
文摘Gallium nitride high electron mobility transistor(GaN HEMT)devices have become critical components in the manufacturing of high-performance radio frequency(RF)or power electronic modules due to their superior characteristics,such as high electron saturation speeds and high power densities.However,the high heat characteristics of GaN HEMTs make device level cooling a critical problem to solve since performance degradation or even failure may occur under high temperatures.In this paper,we proposed a 2.5D integration method with devicelevel microchannel direct cooling for a high-power GaN HEMT device.To demonstrate this technological concept,a multigate GaN HEMT device featuring a gate length/width/source drain spacing of 0.5μm/300μm/6μm that underwent in-house backside thinning and metallization was used as the test vehicle.A high-resistivity silicon(HR Si)interposer embedded with four-layer microchannels was designed,having widths/pitches of 30μm/30μm at the top microchannel.The high-power GaN HEMT device was soldered on a Si interposer embedded with open microchannels for heat dissipation.A pair of GSG Pad chips was soldered simultaneously to display the capacity for the heterogeneous integration of other chip types.Thermal property evaluation was conducted with experiments and simulations.The test results showed that the maximum surface temperature of the GaN HEMT device decreased to 93.8°C when it experienced a heat dissipation density of 32 kW/cm^(2) in the gate finger area and an average heat dissipation density of 5 kW/cm^(2) was found in the active area with the DI water coolant at a flow rate of 3 mL/min.To our knowledge,among recently reported works,this finding was the best cooling capacity of heterogeneously integrated microchannels for GaN HEMT devices.In addition,this technology was scalable regarding the numbers of gate fingers or GaN HEMT devices.
