Electron-rich thiophene-flanked thiazoloisoindigo(Th-TzII)has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport.Here,we report that by using an e...Electron-rich thiophene-flanked thiazoloisoindigo(Th-TzII)has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport.Here,we report that by using an electron deficient thiazole as the flanked moiety,the corresponding thiazoloisoindigo(Tz-TzII)can still be synthesized,although in a more sinuous way.Theoretical calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII,and the corresponding polymer P(TzII-Tz-T-Tz)exhibits high and balanced hole/electron mobility of 0.70/0.64 cm^(2)·V^(-1)·s^(-1).展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.22075105 and 22102086)the start-up funding from Jianghan University。
文摘Electron-rich thiophene-flanked thiazoloisoindigo(Th-TzII)has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport.Here,we report that by using an electron deficient thiazole as the flanked moiety,the corresponding thiazoloisoindigo(Tz-TzII)can still be synthesized,although in a more sinuous way.Theoretical calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII,and the corresponding polymer P(TzII-Tz-T-Tz)exhibits high and balanced hole/electron mobility of 0.70/0.64 cm^(2)·V^(-1)·s^(-1).
