We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200W NH3/N2 remote plasma causes little de...We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200W NH3/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20–30%.Improved current slump,suppressed gate leakage current,and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment.It is found that NH3/N2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.展开更多
基金the National Natural Science Foundation of China under Grant Nos.61634005,61704124,and 11690042.
文摘We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200W NH3/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20–30%.Improved current slump,suppressed gate leakage current,and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment.It is found that NH3/N2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.
