This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coat...This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.展开更多
We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using el...We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation （EBE）. The characteristics of the LaF3/PS system are analyzed by X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy dispersive X-ray spectroscopy （EDX）, and photoluminescence （PL）. XRD confirms the polycrystalline nature of the LaFz film. Nearly stoichiometric growth of LaF3 on PS is established by EDX. Such a thin LaF3 layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer, PL intensity of PS is found to decrease along with a small blue-shift.展开更多
文摘This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.
文摘We present the investigation on LaF3/porous silicon （PS） system that has properties of both the materials to be applied in photonics. Epilayers of LaF3 are grown on PS under different anodization conditions using electron-beam evaporation （EBE）. The characteristics of the LaF3/PS system are analyzed by X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy dispersive X-ray spectroscopy （EDX）, and photoluminescence （PL）. XRD confirms the polycrystalline nature of the LaFz film. Nearly stoichiometric growth of LaF3 on PS is established by EDX. Such a thin LaF3 layer grown on PS leads to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer, PL intensity of PS is found to decrease along with a small blue-shift.
