Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu...Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.展开更多
We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as...We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87%with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors(TFTs)and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of^1×10^3 and field-effect mobility of0.079 cm^2 V^-1s^-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.展开更多
基金supported by National Natural Science Foundation of China(No.U20A20209)Zhejiang Provincial Natural Science Foundation of China(LD19E020001)+1 种基金Zhejiang Provincial Key Research and Development Program(2021C01030)"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province(2021C01SA301612)。
文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs.
基金Supported by the National Natural Science Foundation of China(Grant No.51741209)the Zhejiang Provincial Natural Science Foundation of China(Grant Nos.LR16F040001 and LGG19F040005)。
文摘We examine an amorphous oxide semiconductor(AOS)of ZnRhCuO.The a-ZnRhCuO films are deposited at room temperature,having a high amorphous quality with smooth surface,uniform thickness and evenly distributed elements,as well as a high visible transmittance above 87%with a wide bandgap of 3.12 eV.Using a-ZnRhCuO films as active layers,thin-film transistors(TFTs)and gas sensors are fabricated.The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel,with an on-to-off current ratio of^1×10^3 and field-effect mobility of0.079 cm^2 V^-1s^-1.The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity.Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.