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Structural and Physical Property Analysis of ZnO-SnO_2—In_2O_3—Ga_2O_3 Quaternary Transparent Conducting Oxide System 被引量:2
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作者 P.Jayaram T.P.Jaya +1 位作者 smagul zh.karazhanov P.P.Pradyumnan 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2013年第5期419-422,共4页
The increasing demand in the diverse device applications of transparent conducting oxides (TCOs) requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- ... The increasing demand in the diverse device applications of transparent conducting oxides (TCOs) requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction (XRD) technique and solubility of In3+ and Ga3+ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3+ and Ga3+ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate. 展开更多
关键词 Transparent conducting oxides (TCOs) Structural studies MOBILITY Optical properties
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