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Nature of First-Order Transition in Planar Rotator Model with Modified Potential
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作者 smita ota Snehadri Bihari ota 《Journal of Modern Physics》 2013年第1期140-145,共6页
We have carried out micro-canonical Monte Carlosimulations of a planar rotator model in 30 × 30 lattice using periodic boundary conditions. The energy distribution of the rotator in the lattice shows features tha... We have carried out micro-canonical Monte Carlosimulations of a planar rotator model in 30 × 30 lattice using periodic boundary conditions. The energy distribution of the rotator in the lattice shows features that can be associated with spin wave and vortex excitations. The results supplement the first-order transition observed in canonicalMonte Carlosimulation, due to vortex nucleation. We also see features that can be associated with the in-homogeneity of vortex charge in the critical region. 展开更多
关键词 XY-MODEL SPIN Wave VORTICES
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Microcanonical Monte Carlo Simulation of 2D 4-State Potts Model
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作者 Snehadri Bihari ota smita ota Akiro ota 《Journal of Modern Physics》 2017年第4期602-606,共5页
Monte Carlo simulation of two dimensional 4 state Potts model has been carried out in microcanonical ensemble. The simulations were done on a 30 × 30 system with periodic boundary conditions. The temperature depe... Monte Carlo simulation of two dimensional 4 state Potts model has been carried out in microcanonical ensemble. The simulations were done on a 30 × 30 system with periodic boundary conditions. The temperature dependence of energy and order parameter has been calculated. The transition in 4-state Potts model is concluded to be first-order in nature. The transition temperature and latent heat of the first-order transition have been found to be 0.92 and 0.18, respectively. 展开更多
关键词 MICROCANONICAL MONTE Carlo POTTS Model FIRST-ORDER TRANSITION
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Calibration of GaAlAs Semiconductor Diode
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作者 S. B. ota smita ota 《Journal of Modern Physics》 2012年第10期1490-1493,共4页
The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squ... The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values. 展开更多
关键词 SEMICONDUCTOR TEMPERATURE SENSORS GAALAS
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