Owing to the high carrier mobility,two-dimensional(2D)gallium antimonite(GaSb)is a promising channel material for field-effect transistors(FETs)in the post-silicon era.We investigated the ballistic performance of the ...Owing to the high carrier mobility,two-dimensional(2D)gallium antimonite(GaSb)is a promising channel material for field-effect transistors(FETs)in the post-silicon era.We investigated the ballistic performance of the 2D GaSb metal-oxide-semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation.Because of the wider bandgap and better gate-control ability,the performance of the 10-nm monolayer(ML)GaSb FETs is generally superior to the bilayer counterparts,including the three-to-four orders of magnitude larger on-current.Via hydrogenation,the delaytime and power consumption can be further enhanced with magnitude up to 35%and 57%,respectively,thanks to the expanded bandgap.The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors(ITRS)for high-performance demands in terms of the on-state current,intrinsic delay time,and power-delay product.展开更多
基金supported by the National Natural Science Foundation of China(No.91964101)the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications)and the Research Innovation Fund for College Students of Beijing University of Posts and Telecommunications.
文摘Owing to the high carrier mobility,two-dimensional(2D)gallium antimonite(GaSb)is a promising channel material for field-effect transistors(FETs)in the post-silicon era.We investigated the ballistic performance of the 2D GaSb metal-oxide-semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation.Because of the wider bandgap and better gate-control ability,the performance of the 10-nm monolayer(ML)GaSb FETs is generally superior to the bilayer counterparts,including the three-to-four orders of magnitude larger on-current.Via hydrogenation,the delaytime and power consumption can be further enhanced with magnitude up to 35%and 57%,respectively,thanks to the expanded bandgap.The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors(ITRS)for high-performance demands in terms of the on-state current,intrinsic delay time,and power-delay product.
