GaN ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better ...GaN ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better performance than that of ohmic contacts, it remains unknown how the barrier height at local Schottky contacts controls the sensors' performance. In this work, the piezotronic effect was employed to tune the Schottky barrier height (SBH) at local contacts and hence enhance the performances of Schottky-contacted metal-semiconductor- metal (MSM) structured GaN nanobelt (NB)-based PDs. In general, the response level of the PDs was obviously enhanced by the piezotronic effect when applying a strain on devices. The responsivity of the PD was increased by 18%, and the sensitivity was enhanced by from 22% to 31%, when illuminated by a 325 nm laser with light intensity ranging from 12 to 2 W/cm2. Carefully studying the mechanism using band structure diagrams reveals that the observed enhancement of the PD performance resulted from the change in SBH caused by external strain as well as light intensity. Using piezotronic effects thus provides a practical way to enhance the performance of PDs made not only of GaN, but also other wurtzite and zinc blende family materials.展开更多
Transparent conductive oxides exhibit attractive optical nonlinearity with ultrafast response and giant refractive index change near the epsilon-near-zero(ENZ) wavelength, originating from the intraband dynamics of co...Transparent conductive oxides exhibit attractive optical nonlinearity with ultrafast response and giant refractive index change near the epsilon-near-zero(ENZ) wavelength, originating from the intraband dynamics of conduction electrons. The optical nonlinearity of ENZ materials has been explained by using the overall-effective-mass and the overall-scattering-time of electrons in the extended Drude model. However, their response to optical excitation is yet the last building block to complete the theory. In this paper, the concept of thermal energy is theoretically proposed to account for the total energy of conduction electrons exceeding their thermal equilibrium value. The time-varying thermal energy is adopted to describe the transient optical response of indium-tin-oxide(ITO), a typical ENZ material. A spectrally-resolved femtosecond pump-probe experiment was conducted to verify our theory. By correlating the thermal energy with the pumping density, both the giant change and the transient response of the permittivity of ITO can be predicted. The results in this work provide a new methodology to describe the transient permittivities of ENZ materials, which will benefit the design of ENZ-based nonlinear photonic devices.展开更多
A polarization-insensitive plasmonic absorber is designed consisting of Au fishnet structures on a TiO2 spacer/Ag mirror. The fishnet structures excite localized surface plasmon and generate hot electrons from the abs...A polarization-insensitive plasmonic absorber is designed consisting of Au fishnet structures on a TiO2 spacer/Ag mirror. The fishnet structures excite localized surface plasmon and generate hot electrons from the absorbed photons, while the TiO2 layer induces Fabry–Perot resonance, and the Ag mirror acts as a back reflector.Through optimizing the TiO2 layer thickness, numerical simulation shows that 97% of the incident light is absorbed in the Au layer. The maximum responsivity and external quantum efficiency of the device can approach 5 mA/W and ~1%, respectively, at the wavelength of 700 nm.展开更多
基金Acknowledgements This research was supported by National Science Foundation (NSF), Multidisciplinary University Research Initiative (MURI) Airforce, Basic Energy Sciences (BES) Department of Energy (DOE) (No. DE- FG02-07ER46394) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-YW-M13).
文摘GaN ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better performance than that of ohmic contacts, it remains unknown how the barrier height at local Schottky contacts controls the sensors' performance. In this work, the piezotronic effect was employed to tune the Schottky barrier height (SBH) at local contacts and hence enhance the performances of Schottky-contacted metal-semiconductor- metal (MSM) structured GaN nanobelt (NB)-based PDs. In general, the response level of the PDs was obviously enhanced by the piezotronic effect when applying a strain on devices. The responsivity of the PD was increased by 18%, and the sensitivity was enhanced by from 22% to 31%, when illuminated by a 325 nm laser with light intensity ranging from 12 to 2 W/cm2. Carefully studying the mechanism using band structure diagrams reveals that the observed enhancement of the PD performance resulted from the change in SBH caused by external strain as well as light intensity. Using piezotronic effects thus provides a practical way to enhance the performance of PDs made not only of GaN, but also other wurtzite and zinc blende family materials.
基金supported by the National Natural Science Foundation of China(Grant Nos.91950207,12174310,61805157,and 11974282)。
文摘Transparent conductive oxides exhibit attractive optical nonlinearity with ultrafast response and giant refractive index change near the epsilon-near-zero(ENZ) wavelength, originating from the intraband dynamics of conduction electrons. The optical nonlinearity of ENZ materials has been explained by using the overall-effective-mass and the overall-scattering-time of electrons in the extended Drude model. However, their response to optical excitation is yet the last building block to complete the theory. In this paper, the concept of thermal energy is theoretically proposed to account for the total energy of conduction electrons exceeding their thermal equilibrium value. The time-varying thermal energy is adopted to describe the transient optical response of indium-tin-oxide(ITO), a typical ENZ material. A spectrally-resolved femtosecond pump-probe experiment was conducted to verify our theory. By correlating the thermal energy with the pumping density, both the giant change and the transient response of the permittivity of ITO can be predicted. The results in this work provide a new methodology to describe the transient permittivities of ENZ materials, which will benefit the design of ENZ-based nonlinear photonic devices.
基金the National Natural Science Foundation of China (NSFC)(Nos. 91950207,61675171,and 61675169)Fundamental Research Funds for the Central Universities of China (Nos. 3102017-HQZZ022 and 3102017zy021)。
文摘A polarization-insensitive plasmonic absorber is designed consisting of Au fishnet structures on a TiO2 spacer/Ag mirror. The fishnet structures excite localized surface plasmon and generate hot electrons from the absorbed photons, while the TiO2 layer induces Fabry–Perot resonance, and the Ag mirror acts as a back reflector.Through optimizing the TiO2 layer thickness, numerical simulation shows that 97% of the incident light is absorbed in the Au layer. The maximum responsivity and external quantum efficiency of the device can approach 5 mA/W and ~1%, respectively, at the wavelength of 700 nm.