期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Terahertz Semiconductor Quantum Well Devices 被引量:2
1
作者 Liu H C Luo H +10 位作者 Ban D Waichter M Song C Y Wasilewski Z R Buchanan M aers G C springthorpe a j Cao j C Feng S L Williams B S Hu Q 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期627-634,共8页
For eventually providing terahertz science with compact and convenient devices,terahertz (1~10THz) quantum-well photodetectors and quantum-cascade lasers are investigated.The design and projected detector performance... For eventually providing terahertz science with compact and convenient devices,terahertz (1~10THz) quantum-well photodetectors and quantum-cascade lasers are investigated.The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons.Background limited infrared performance (BLIP) operations are observed for all samples (three in total),designed for different wavelengths.BLIP temperatures of 17,13,and 12K are achieved for peak detection frequencies of 9.7THz(31μm),5.4THz(56μm),and 3.2THz(93μm),respectively.A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied.The δ-doping density for each period varies from 3.2×1010 to 4.8×1010cm-2.We observe that the lasing threshold current density increases monotonically with doping concentration.Moreover,the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically.Interestingly the observed maximum lasing temperature is best at a doping density of 3.6×1010cm-2. 展开更多
关键词 半导体 量子论 激光技术 光电探测器
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部