The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High ...The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.展开更多
Performance and power consumption are two important design objectives for data centers consisting of thousands or tens of thousands of disks （or disk arrays）. To leverage the two objectives, in this study we propose...Performance and power consumption are two important design objectives for data centers consisting of thousands or tens of thousands of disks （or disk arrays）. To leverage the two objectives, in this study we propose a multi-version disk array （MDA）. The main idea of MDA is to exploit the I/O workload characteristics to guide the replication strategy by replicating multiple versions of the popular data blocks and simply offioading the write data to the free space of the reserved version region, thus achieving high performance in the burst period and low power consumption in the idle period. Our prototype implementation of MDA and the performance evaluations show that the performance of MDA outperforms that of traditional RAID10 by up to 34.4% and 42.3% in terms of the average response time for the online transaction processing （OLTP） application I/O and search engine I/O, respectively. Moreover, the energy efficiency of MDA outperforms that of RAID10 by up to 48.7% and 36.4%, respective to the aforementioned measures.展开更多
基金Project supported by the Equipment Developing Advanced Research Program of China(Grant No.6140A24030107)。
文摘The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.
基金supported by the National Natural Science Foundation of China(No.61100033)the US National Science Foundation(Nos.NSF-CNS-1016609 and NSF-IIS-0916859)the Changjiang Innovative Group of Education of China(No.IRT0725)
文摘Performance and power consumption are two important design objectives for data centers consisting of thousands or tens of thousands of disks （or disk arrays）. To leverage the two objectives, in this study we propose a multi-version disk array （MDA）. The main idea of MDA is to exploit the I/O workload characteristics to guide the replication strategy by replicating multiple versions of the popular data blocks and simply offioading the write data to the free space of the reserved version region, thus achieving high performance in the burst period and low power consumption in the idle period. Our prototype implementation of MDA and the performance evaluations show that the performance of MDA outperforms that of traditional RAID10 by up to 34.4% and 42.3% in terms of the average response time for the online transaction processing （OLTP） application I/O and search engine I/O, respectively. Moreover, the energy efficiency of MDA outperforms that of RAID10 by up to 48.7% and 36.4%, respective to the aforementioned measures.
