Impact of uneven distribution of grain characteristics on yield strength and martensitic transformation of as-hot-rolled medium-entropy alloys

As-hot-rolled medium-entropy alloys(MEAs)with unevenly distributed grain sizes of face-centered cubic grains exhibit better yield strength without uniform elongation loss compared to cold-rolled and an-nealed ones.Successive operation of dynamic recrystallization(DRX)during several hot rolling passes leads to a wide range of grain sizes from submicrons to tens of micrometers due to the grain growth after nucleation:early recrystallized grains are coarser than recently recrystallized ones.Not only the grain size but internal dislocation density of the recently recrystallized grain is low.During the tensile deformation of the hot-rolled MEAs at-196 ℃,dislocation pile-ups in the relatively soft and fine DRX grains enhance yield stress and hetero-deformation-induced strain hardening.Thanks to the enhanced yield stress of the as-hot-rolled MEAs,stress-induced martensitic transformation easily occurs.Notably,partially DRXed MEAs hot-rolled at 800 ℃ have lower yield stress than fully DRXed ones,hot-rolled at 900 and 1000 ℃.This is attributed to the softening effect of the stress-induced body-centered cubic martensitic transformation in unrecrystallized coarse grains prior to the yielding,which lowers the yield stress of the partially DRXed ones.After yielding,the martensitic transformation facilitates strain hard-ening and early necking is precluded.This study presents a fresh outlook on the uneven distribution of grain sizes by hot rolling beneficial to mechanical responses of uniform elongation of~45%despite the as-rolled states with an advantage of simplified thermo-mechanical processes.

Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics

Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly（1,3,5-trivinyl-l,3,5-trimethyl cyclotrisiloxane） （pV3D3）-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic （MAGIC） architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery- powered flexible electronic systems.