TiVN films were deposited on Si(100) wafers without external heating and biasing by reactive dc magnetron co-sputtering. Titanium and vanadium metals were used as sputtering targets. Ar and N2 gases were used as sputt...TiVN films were deposited on Si(100) wafers without external heating and biasing by reactive dc magnetron co-sputtering. Titanium and vanadium metals were used as sputtering targets. Ar and N2 gases were used as sputtering gas and reactive gas, respectively. The flow rates of Ar and N2 were 8 and 4 sccm, respectively. The Ti sputtering current (ITi) was kept constant at 0.6 Aand V sputtering current (IV) was varied from 0.4 to1.0 A. The deposition time for all the deposited films was 30 min. The effects of V sputtering current on the structure, surface and cross-sectional morphologies, and chemical composition and chemical state of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM), and X-ray photoelectron spectroscopy (XPS), respectively. It was found that all the prepared film formed (Ti,V)N solid solution. The lattice parameter was found to decrease while crystallite size, RMS roughness and film thickness increased with increasing V sputtering current. High resolution XPS spectra of the Ti 2p, V 2p and N 1s revealed that the fraction of Ti-N and V-N bonds increased as the V sputtering current increased. However, the V-N bond was observed only at a high V sputtering current.展开更多
In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dio...In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dioxide (TiO2) thin films were deposited on unheated Si (110) wafers, glass slides and carbon coated copper grids at different substrate to target (ds-t) distances. The structural properties of TiO2 thin films were characterized by X-ray diffraction (XRD) and transmission electron microcopy (TEM) with selected-area electron diffraction (SAED), surface morphology using atomic force microscopy (AFM) and optical transmission spectra using a spectrophotometer. XRD results show that TiO2 films deposited at various ds-t distances have only rutile crystal structure. The crystallinity and thickness of the films increased while the roughness decreased with decreasing ds-t distance. The refractive indices of the deposited films were found to be in the range of 2.51 - 2.82 and increased with decreasing ds-t distance.展开更多
文摘TiVN films were deposited on Si(100) wafers without external heating and biasing by reactive dc magnetron co-sputtering. Titanium and vanadium metals were used as sputtering targets. Ar and N2 gases were used as sputtering gas and reactive gas, respectively. The flow rates of Ar and N2 were 8 and 4 sccm, respectively. The Ti sputtering current (ITi) was kept constant at 0.6 Aand V sputtering current (IV) was varied from 0.4 to1.0 A. The deposition time for all the deposited films was 30 min. The effects of V sputtering current on the structure, surface and cross-sectional morphologies, and chemical composition and chemical state of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM), and X-ray photoelectron spectroscopy (XPS), respectively. It was found that all the prepared film formed (Ti,V)N solid solution. The lattice parameter was found to decrease while crystallite size, RMS roughness and film thickness increased with increasing V sputtering current. High resolution XPS spectra of the Ti 2p, V 2p and N 1s revealed that the fraction of Ti-N and V-N bonds increased as the V sputtering current increased. However, the V-N bond was observed only at a high V sputtering current.
文摘In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dioxide (TiO2) thin films were deposited on unheated Si (110) wafers, glass slides and carbon coated copper grids at different substrate to target (ds-t) distances. The structural properties of TiO2 thin films were characterized by X-ray diffraction (XRD) and transmission electron microcopy (TEM) with selected-area electron diffraction (SAED), surface morphology using atomic force microscopy (AFM) and optical transmission spectra using a spectrophotometer. XRD results show that TiO2 films deposited at various ds-t distances have only rutile crystal structure. The crystallinity and thickness of the films increased while the roughness decreased with decreasing ds-t distance. The refractive indices of the deposited films were found to be in the range of 2.51 - 2.82 and increased with decreasing ds-t distance.
