Excellent electrical properties and the impact of latest power devices for improving the efficiency of photovohaic（PV） inverters are presented.Power modules using SiC-MOSFET and SBD exhibit the possibility to realiz...Excellent electrical properties and the impact of latest power devices for improving the efficiency of photovohaic（PV） inverters are presented.Power modules using SiC-MOSFET and SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99%.Si-IGBT modules using reverse-blocking（RB）-IGBT have enabled to massproduce PV inverters with peak efficiency of 98.4%.Si superjunction（SJ）-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.展开更多
文摘Excellent electrical properties and the impact of latest power devices for improving the efficiency of photovohaic（PV） inverters are presented.Power modules using SiC-MOSFET and SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99%.Si-IGBT modules using reverse-blocking（RB）-IGBT have enabled to massproduce PV inverters with peak efficiency of 98.4%.Si superjunction（SJ）-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
