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ELECTRONIC STRUCTURE OF THE LaNi_(5-x)Ga_x INTERMETALLIC COMPOUNDS
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作者 D. Chen G.X. Li +1 位作者 D.L. Zhang t. gao 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2008年第3期157-162,共6页
The equilibrium structures and electronic structure of LaNi5-xGax (x=0, 0.5, 1.0) compounds have been investigated by all-electron calculations. Based on the full geometry optimization, the densities of states and e... The equilibrium structures and electronic structure of LaNi5-xGax (x=0, 0.5, 1.0) compounds have been investigated by all-electron calculations. Based on the full geometry optimization, the densities of states and electron densities of LaNi5-xGax are plotted and analyzed. It is clear that the substitution of Ga at the Ni site leads to a progressive filling of the Ni-d bands, the ionic interaction between Ni and Ni, with Ga plays a dominant role in the stability of LaNi5-xGax compounds. The smaller the shift of EF toward higher energy region, the more stable the compounds will be. The increased contribution of the Ni-d-Ga-d interactions near EF and the low energy metal-gallium bonding bands indicate that the compounds become more stable. The results are compared with experimental data and discussed in light of previous studies. 展开更多
关键词 FLAPW and GGA LaNi5-xGax Intermetallie compound Electronic structure
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