Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (...Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.展开更多
This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc_(0.5)Nb_(0.5)O_(3)(PSN)single crystals and epitaxi...This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc_(0.5)Nb_(0.5)O_(3)(PSN)single crystals and epitaxially compressed thin films grown on(100)-oriented MgO substrates.It is found that there are significant differences between the properties of the crystals and films,and that these differences can be attributed to the anticipated structural differences between these two forms of the same material.In particular,the scattering characteristics of the oxygen octahedra breathing mode near 810 cm^(-1) indicate a ferroelectric state for the crystals and a relaxor state for the films,which is consistent with the dielectric behaviors of these materials.展开更多
基金supported by Czech Grant Agency under GACR P108/10/1315 and P108/13-33056S
文摘Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.
基金supported by the Czech Science Foundation(Projects CSF 15-04121S and 15-15123S)the United Stated Office of Naval Research(Grant No.N00014-12-1-1045)the Natural Science&Engineering Research Council of Canada(NSERC).
文摘This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc_(0.5)Nb_(0.5)O_(3)(PSN)single crystals and epitaxially compressed thin films grown on(100)-oriented MgO substrates.It is found that there are significant differences between the properties of the crystals and films,and that these differences can be attributed to the anticipated structural differences between these two forms of the same material.In particular,the scattering characteristics of the oxygen octahedra breathing mode near 810 cm^(-1) indicate a ferroelectric state for the crystals and a relaxor state for the films,which is consistent with the dielectric behaviors of these materials.
