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Eu luminescence from BaTiO_(3)/SiO_(2)multilayer xerogel structures
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作者 N.Gaponenko D.Parafinyuk +2 位作者 P.Kholov t.raichenok S.Prislopski 《Journal of Advanced Dielectrics》 CAS 2020年第3期60-63,共4页
Sol-gel technology was applied to fabricate Eu-doped BaTiO_(3)/SiO_(2)multilayer structures by spinning on silicon and fused silica substrates.Eu photoluminescence(PL)was investigated depending on the annealing temper... Sol-gel technology was applied to fabricate Eu-doped BaTiO_(3)/SiO_(2)multilayer structures by spinning on silicon and fused silica substrates.Eu photoluminescence(PL)was investigated depending on the annealing temperature of these structures.The samples demonstrate the room temperature luminescence corresponding to^(5)D^(0)→^(7)F_(J)(J=1,2,3,4)transitions of trivalent europium with the most intensive band at 615 nm.For the structure on fused silica with Eu in the BaTiO_(3)cavity,increase of the annealing temperature from 450℃to 700℃results in modification of the luminescence indicatrix and lowering of the luminescence intensity in the direction along the surface normal.For BaTiO_(3)/SiO_(2)multilayer structure generated on silicon,scanning electron microscopy(SEM)analyses reveal disordering after annealing at 1000℃.This heat treatment provides also an increase of the Eu luminescence intensity. 展开更多
关键词 Photonic crystal Bragg reflector SOL-GEL EUROPIUM LUMINESCENCE
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