We investigate the properties of the Ce isotopes with neutron number N =60 - 90 and the properties of the heavy nuclei near 242Am within the framework of deformed relativistic mean-field （RMF） theory. A systematic c...We investigate the properties of the Ce isotopes with neutron number N =60 - 90 and the properties of the heavy nuclei near 242Am within the framework of deformed relativistic mean-field （RMF） theory. A systematic comparison between theoretical results and experimental data is made. The calculated binding energies, two-neutron separation energies, and two-proton separation energies are in good agreement with experimental ones. The variation trend of experimental quadrupole deformation parameters on the Ce isotopes can be approximately reproduced by the RMF model. It is found that there exists an abnormally large deformation in the ground state of proton-rich Ce isotopes. This phenomenon can be the general behavior of proton-rich nuclei on the neighboring isotopic chains such as Nd and Sin isotopes. For the heavy nuclei near ^242 Am the properties of the ground state and superdeformed isomeric state can be approximately reproduced by the RMF model. The mechanism of the appearance of anomalously large deformation or superdeformation is analyzed and its influence on nuclear properties is discussed. Parther experiments to study the anomalously large deformation in some proton-rich nuclei are suggested.展开更多
In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and...In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.展开更多
基金国家自然科学基金，国家重点基础研究发展计划(973计划)，中国科学院知识创新工程项目，the Research Fund for the Doctoral Program of Higher Education of China
文摘We investigate the properties of the Ce isotopes with neutron number N =60 - 90 and the properties of the heavy nuclei near 242Am within the framework of deformed relativistic mean-field （RMF） theory. A systematic comparison between theoretical results and experimental data is made. The calculated binding energies, two-neutron separation energies, and two-proton separation energies are in good agreement with experimental ones. The variation trend of experimental quadrupole deformation parameters on the Ce isotopes can be approximately reproduced by the RMF model. It is found that there exists an abnormally large deformation in the ground state of proton-rich Ce isotopes. This phenomenon can be the general behavior of proton-rich nuclei on the neighboring isotopic chains such as Nd and Sin isotopes. For the heavy nuclei near ^242 Am the properties of the ground state and superdeformed isomeric state can be approximately reproduced by the RMF model. The mechanism of the appearance of anomalously large deformation or superdeformation is analyzed and its influence on nuclear properties is discussed. Parther experiments to study the anomalously large deformation in some proton-rich nuclei are suggested.
基金supported by the National Natural Science Foundation of China (Grant No. 51141002)the Fundamental Research Funds for the Central Universities (B1020270)Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010521)
文摘In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.
