We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and re...We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi_(2).The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.展开更多
Resonably good agreement among the photoluminescence,absorption,in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In_(0.20)Ga_(0.80)As/GaAs single quantum...Resonably good agreement among the photoluminescence,absorption,in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In_(0.20)Ga_(0.80)As/GaAs single quantum wells.The strain of each sample has been deduced.展开更多
文摘We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi_(2).The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.
文摘Resonably good agreement among the photoluminescence,absorption,in-plane photocurrent and theoretical calculation demonstrates the effect of GaAs barrier width on the strain in In_(0.20)Ga_(0.80)As/GaAs single quantum wells.The strain of each sample has been deduced.
