Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investi...Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency.The electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in MFSHEMTs.High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state current.The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.展开更多
Three-dimensional image reconstruction with Feldkamp,Davis,and Kress(FDK)algorithm is the most time consuming part in Micro-CT.The parallel algorithm based on the computer cluster is capable of accelerating image reco...Three-dimensional image reconstruction with Feldkamp,Davis,and Kress(FDK)algorithm is the most time consuming part in Micro-CT.The parallel algorithm based on the computer cluster is capable of accelerating image reconstruction speed;however,the hardware is very expensive.In this paper,using the most current graphics processing units(GPU),we present a method based on common unified device architecture(CUDA)for speeding up the Micro-CT image reconstruction process.The most time consuming filtering and back-projection parts of the FDK algorithm are parallelized for the CUDA architecture.The CUDA-based reconstruction speed and image qualities are compared with CPU results for the projecting data of the Micro-CT system.The results show that the 3D image reconstruction speed based on CUDA is ten times faster than the speed with CPU.In conclusion the FDK algorithm based on CUDA for Micro-CT can reconstruct the 3D image right after the end of data acquisition.展开更多
The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventio...The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately.To overcome such limitation,organic-2D composites with high mechanical properties are proposed as the active layer of RRAM.Moreover,we enhance the reliability of the device by ZrO_(2)insertion layer,resulting in stable synaptic performance.The Ag/PVA:h-BN/ZrO_(2)/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5×10^(2),a~2400 cycles endurance and a long retention time(>6×10^(3)s),which are essential for the development of high-performance RRAMs.We also study the possible synaptic mechanism and dynamic plasticity of the memory device,observing the transition from short-term potentiation(STP)to long-term potentiation(LTP)under the effect of continuous voltage pulses.Moreover,the device exhibits both long-term depression(LTD)and paired-pulse facili-tation(PPF)properties,which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses,representing promising avenues for the devel-opment of advanced neuromorphic computing systems.展开更多
Nano-focusing structures based on hybrid plasmonic waveguides are likely to play a key role in strong nonlinear optical devices.Although the insertion loss is considerable,a significant nonlinear phase shift may be ac...Nano-focusing structures based on hybrid plasmonic waveguides are likely to play a key role in strong nonlinear optical devices.Although the insertion loss is considerable,a significant nonlinear phase shift may be achieved by decreasing the nano-focusing device footprint and careful parameter optimization.Here,we study the Kerr effect in hybrid plasmonic waveguides by analyzing the mode effective area,energy velocity,and insertion loss.Particularly,by utilizing plasmonics to manipulate the effective index and mode similarity,the TM mode is reflected and absorbed,while the TE mode passes through with relatively low propagation loss.By providing a deep understanding of hybrid plasmonic waveguides for nonlinear applications,we indicate pathways for their future optimization.展开更多
Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and ban...Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.展开更多
基金Project supported by Guangxi Science and Technology Planning Project (Grant Nos. AD19245066, AA19254015, AD21220150, and AD18281037)the National Nature Science Foundation of China (Grant Nos. 61874036, 62174041, and 62041403)+4 种基金China Postdoctoral Science Foundation (Grant No. 2020M683626XB)the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant No. 2018GXNSFAA138025)Guangxi Innovation Research Team Project (Grant No. 2018GXNSFGA281004)GUET Excellent Graduate Thesis (Grant No. YXYJRX01)the Fund from the State Key Laboratory of ASIC & System (Grant No. KVH1233021)
文摘Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency.The electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in MFSHEMTs.High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state current.The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.
基金the financial support by National Nature Science Foundation of China(Grant No.30070261).
文摘Three-dimensional image reconstruction with Feldkamp,Davis,and Kress(FDK)algorithm is the most time consuming part in Micro-CT.The parallel algorithm based on the computer cluster is capable of accelerating image reconstruction speed;however,the hardware is very expensive.In this paper,using the most current graphics processing units(GPU),we present a method based on common unified device architecture(CUDA)for speeding up the Micro-CT image reconstruction process.The most time consuming filtering and back-projection parts of the FDK algorithm are parallelized for the CUDA architecture.The CUDA-based reconstruction speed and image qualities are compared with CPU results for the projecting data of the Micro-CT system.The results show that the 3D image reconstruction speed based on CUDA is ten times faster than the speed with CPU.In conclusion the FDK algorithm based on CUDA for Micro-CT can reconstruct the 3D image right after the end of data acquisition.
基金supported by Guangxi Natural Science Foundation(No.2022GXNSFBA035487)Guangxi Science and Technology Project(No.AD21220056,AD19110038)+2 种基金National Natural Science Foundation of China(No.62174041,52061009,52262022)Yunnan Province Major Science and Technology Projects(202102AB080008-2)Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(No.DH202203,DH202202,DH202221,DH202222,DH202214).
文摘The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately.To overcome such limitation,organic-2D composites with high mechanical properties are proposed as the active layer of RRAM.Moreover,we enhance the reliability of the device by ZrO_(2)insertion layer,resulting in stable synaptic performance.The Ag/PVA:h-BN/ZrO_(2)/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5×10^(2),a~2400 cycles endurance and a long retention time(>6×10^(3)s),which are essential for the development of high-performance RRAMs.We also study the possible synaptic mechanism and dynamic plasticity of the memory device,observing the transition from short-term potentiation(STP)to long-term potentiation(LTP)under the effect of continuous voltage pulses.Moreover,the device exhibits both long-term depression(LTD)and paired-pulse facili-tation(PPF)properties,which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses,representing promising avenues for the devel-opment of advanced neuromorphic computing systems.
基金This work was supported by the National Natural Science Foundation of China(No.61775005)the Key Program of the National Natural Science Foundation of China(No.62035001).
文摘Nano-focusing structures based on hybrid plasmonic waveguides are likely to play a key role in strong nonlinear optical devices.Although the insertion loss is considerable,a significant nonlinear phase shift may be achieved by decreasing the nano-focusing device footprint and careful parameter optimization.Here,we study the Kerr effect in hybrid plasmonic waveguides by analyzing the mode effective area,energy velocity,and insertion loss.Particularly,by utilizing plasmonics to manipulate the effective index and mode similarity,the TM mode is reflected and absorbed,while the TE mode passes through with relatively low propagation loss.By providing a deep understanding of hybrid plasmonic waveguides for nonlinear applications,we indicate pathways for their future optimization.
基金Project supported by the National Natural Science Foundation of China(Nos.61764001,61665001,51665009,11965009,61874036,and 61805053)the Guangxi Science and Technology Base and Talent Special Project,China(Nos.AD18281084,AD18281030,AD18281034,and AD18281037)+3 种基金the Guangxi Key Laboratory of Precision Navigation Technology and Application,China(No.DH201808)the One Hundred Person Project of Guangxi as well as the Thousands of Key Teacher Training Project of Guangxi Education Department,Chinathe Innovation Project of Guilin University of Electronic Technology Graduate Education,China(No.2019YCXS021)the Natural Science Foundation of Shanghai,China(No.19ZR1420100)。
文摘Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.