期刊文献+
共找到5篇文章
< 1 >
每页显示 20 50 100
Impact of Al_(x)Ga_(1-x)N barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al_(2)O_(3)/AlGaN/GaN MFSHEMTs
1
作者 Yue Li Xingpeng Liu +5 位作者 tangyou sun Fabi Zhang Tao Fu Peihua Wang-yang Haiou Li Yonghe Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期502-510,共9页
Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investi... Ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency.The electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in MFSHEMTs.High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state current.The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device. 展开更多
关键词 ferroelectric polarization HfZrO ferroelectric gate HEMTS
下载PDF
FAST RECONSTRUCTION METHOD BASED ON COMMON UNIFIED DEVICE ARCHITECTURE(CUDA)FOR MICRO-CT
2
作者 GUOTAO QUAN tangyou sun YONG DENG 《Journal of Innovative Optical Health Sciences》 SCIE EI CAS 2010年第1期39-43,共5页
Three-dimensional image reconstruction with Feldkamp,Davis,and Kress(FDK)algorithm is the most time consuming part in Micro-CT.The parallel algorithm based on the computer cluster is capable of accelerating image reco... Three-dimensional image reconstruction with Feldkamp,Davis,and Kress(FDK)algorithm is the most time consuming part in Micro-CT.The parallel algorithm based on the computer cluster is capable of accelerating image reconstruction speed;however,the hardware is very expensive.In this paper,using the most current graphics processing units(GPU),we present a method based on common unified device architecture(CUDA)for speeding up the Micro-CT image reconstruction process.The most time consuming filtering and back-projection parts of the FDK algorithm are parallelized for the CUDA architecture.The CUDA-based reconstruction speed and image qualities are compared with CPU results for the projecting data of the Micro-CT system.The results show that the 3D image reconstruction speed based on CUDA is ten times faster than the speed with CPU.In conclusion the FDK algorithm based on CUDA for Micro-CT can reconstruct the 3D image right after the end of data acquisition. 展开更多
关键词 MICRO-CT FDK CUDA GPU
下载PDF
Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior
3
作者 tangyou sun Fantao Yu +9 位作者 Xiaosheng Tang Haiou Li Fabi Zhang Zhimou Xu Qing Liao Zhiqiang Yu Xingpeng Liu Peihua Wangyang Hezhang Li Ying Peng 《Journal of Materiomics》 SCIE CSCD 2024年第2期440-447,共8页
The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventio... The field of artificial intelligence and neural computing has been rapidly expanding due to the imple-mentation of resistive random-access memory(RRAM)based artificial synaptic.However,the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately.To overcome such limitation,organic-2D composites with high mechanical properties are proposed as the active layer of RRAM.Moreover,we enhance the reliability of the device by ZrO_(2)insertion layer,resulting in stable synaptic performance.The Ag/PVA:h-BN/ZrO_(2)/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5×10^(2),a~2400 cycles endurance and a long retention time(>6×10^(3)s),which are essential for the development of high-performance RRAMs.We also study the possible synaptic mechanism and dynamic plasticity of the memory device,observing the transition from short-term potentiation(STP)to long-term potentiation(LTP)under the effect of continuous voltage pulses.Moreover,the device exhibits both long-term depression(LTD)and paired-pulse facili-tation(PPF)properties,which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses,representing promising avenues for the devel-opment of advanced neuromorphic computing systems. 展开更多
关键词 Resistive random-access memory Synaptic mimicking Organic-2D composite material Neuromorphic computing
原文传递
Kerr effect in ultra-compact hybrid plasmonic metal-insulator-metal nano-focusing structure
4
作者 Kejian Zhu Pengfei sun +4 位作者 F|engfei Xu Xingpeng Liu tangyou sun Haiou Li Zhiping Zhou 《Chinese Optics Letters》 SCIE EI CAS CSCD 2022年第3期106-110,共5页
Nano-focusing structures based on hybrid plasmonic waveguides are likely to play a key role in strong nonlinear optical devices.Although the insertion loss is considerable,a significant nonlinear phase shift may be ac... Nano-focusing structures based on hybrid plasmonic waveguides are likely to play a key role in strong nonlinear optical devices.Although the insertion loss is considerable,a significant nonlinear phase shift may be achieved by decreasing the nano-focusing device footprint and careful parameter optimization.Here,we study the Kerr effect in hybrid plasmonic waveguides by analyzing the mode effective area,energy velocity,and insertion loss.Particularly,by utilizing plasmonics to manipulate the effective index and mode similarity,the TM mode is reflected and absorbed,while the TE mode passes through with relatively low propagation loss.By providing a deep understanding of hybrid plasmonic waveguides for nonlinear applications,we indicate pathways for their future optimization. 展开更多
关键词 silicon photonics PLASMONICS nonlinear optics nano-focusing
原文传递
Band-gap tunable(Ga_(x)In_(1−x))_(2)O_(3)layer grown by magnetron sputtering
5
作者 Fabi ZHANG Jinyu sun +11 位作者 Haiou LI Juan ZHOU Rong WANG tangyou sun Tao FU Gongli XIAO Qi LI Xingpeng LIU Xiuyun ZHANG Daoyou GUO Xianghu WANG Zujun QIN 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2021年第10期1370-1378,共9页
Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and ban... Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications. 展开更多
关键词 (Ga_(x)In_(1−x))_(2)O_(3)films Band-gap tunable Magnetron sputtering
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部