Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO mi...Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained,which is well in accordance with x-ray diffraction analysis.The obtained ZnO microrods have uniform lengths of about 2µm and side lengths of about 100 nm.As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K.The acceptor binding energy is estimated to be 128 meV.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.10804040,61076104 and 11004092the Doctoral Scientific Research Starting Foundation of Liaoning Province(No.20081081)。
文摘Arsenic-doped petal-like zinc oxide microrods are grown on silicon(100)substrates by the chemical vapor deposition method without the use of catalysts.Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained,which is well in accordance with x-ray diffraction analysis.The obtained ZnO microrods have uniform lengths of about 2µm and side lengths of about 100 nm.As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K.The acceptor binding energy is estimated to be 128 meV.