We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insula...We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.展开更多
基金Engineering and Physical Sciences Research Council (EP/T007303/1)Agencia Estatal de Investigación and NextGenerationEU/PRTR (FJC2020-042823-I)。
文摘We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.
