The relativistic equation of motion for electrons in a Cylindrical condenser is presented precisely.The analytical expression for the trajectory of electrons in the vicinity of the circular trajectory is given approxi...The relativistic equation of motion for electrons in a Cylindrical condenser is presented precisely.The analytical expression for the trajectory of electrons in the vicinity of the circular trajectory is given approximately,which has an error of about 1%in comparison with numerical calculations.The properties of the focuses are discussed with the theoretical results of this paper.展开更多
By using the plan-view transmission electron microscopy,cross-sectional transmission electron microscopy,and Rutherford backscattering(and channeling)spectrometry technology,the effects of H^(+)-implantation on the fo...By using the plan-view transmission electron microscopy,cross-sectional transmission electron microscopy,and Rutherford backscattering(and channeling)spectrometry technology,the effects of H^(+)-implantation on the formation of secondary defects in self-implanted Si(100)were investigated.Experiments indicate that the H^(+)-implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).展开更多
基金Supported by the National Natural Science Foundation of China and the National Education Committee's Laboratory of Radiation Beams and Materials Engineering.
文摘The relativistic equation of motion for electrons in a Cylindrical condenser is presented precisely.The analytical expression for the trajectory of electrons in the vicinity of the circular trajectory is given approximately,which has an error of about 1%in comparison with numerical calculations.The properties of the focuses are discussed with the theoretical results of this paper.
基金Supported by the National Natural Science Foundation of China。
文摘By using the plan-view transmission electron microscopy,cross-sectional transmission electron microscopy,and Rutherford backscattering(and channeling)spectrometry technology,the effects of H^(+)-implantation on the formation of secondary defects in self-implanted Si(100)were investigated.Experiments indicate that the H^(+)-implantation can reduce the formation of secondary defects and improve the perfection of crystal in self-implanted Si(100).