The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and ...The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices. Key words semiconductor - MOSFET - transport - mesoscopic system CLC number TN 303 - TN 304 Foundation item: Supported by the National Defense Foundation of China(99J2. 4. 1. JW0514)Biography: TONG Jian-nong(1961-), male, Ph. D candidate, Senior engineer, research direction: IC design.展开更多
A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distri...A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation self-consistency.The result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.展开更多
文摘The electron transports in micro-architecture semiconductor are simulated using vertical SOI nMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices. Key words semiconductor - MOSFET - transport - mesoscopic system CLC number TN 303 - TN 304 Foundation item: Supported by the National Defense Foundation of China(99J2. 4. 1. JW0514)Biography: TONG Jian-nong(1961-), male, Ph. D candidate, Senior engineer, research direction: IC design.
文摘A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation self-consistency.The result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.
