Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0&...Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.10475102)the Scientific Research Foundation of Heze University,China (Grant No.XY09WL02)the Heze University Doctoral Foundation (Grant No.XY10BS02)
文摘Thermally grown amorphous SiO2 （a-SiOz） films were implanted at room temperature （RT） with 100 keV C-ions to 5.0× 10^17 ions/cm2. These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x 1012 and 5.0× 10^12 ions/cm2. Then the samples were investigated using Transmission Electron Microscopy （TEM） at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0× 10^12 Pb/cm2 irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0× 10^12 Pb/cm2. Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.
