A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabri...A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.展开更多
基金the "National" Science Council for finan-cially supporting this research under contract No. NSC 96-2221-E-006-079-MY3 and NSC 98-2218-E-006-005-MY2supported by TDPA program (Grant No. TDPA 97-EC-17-A-07-S1-105)
文摘A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demonstrated to be a promising method to be widely exploited in the manufacture of all kinds of LED devices.
