We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the speci...We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.展开更多
We prepared thulium and cerium co-doped tantalum-oxide (Ta2O5 :Tm, Ce) thin films by radiofrequency co-sputtering of Tm2O3 and CeO2 pellets on a Ta2O5 disc for the first time, and photoluminescence (PL) properties of ...We prepared thulium and cerium co-doped tantalum-oxide (Ta2O5 :Tm, Ce) thin films by radiofrequency co-sputtering of Tm2O3 and CeO2 pellets on a Ta2O5 disc for the first time, and photoluminescence (PL) properties of the films annealed at 700°C, 800°C, 900°C, or 1000°C for 20 min were evaluated. PL peaks around a wavelength of 800 nm due to Tm3+?were observed for films annealed at 900°C or 1000°C. The peak intensities of films prepared using one Tm2O3 pellet and one CeO2 pellet were much stronger than those of films prepared using one Tm2O3 pellet and two CeO2 pellets or films prepared using two Tm2O3 pellets and one CeO2 pellet. To obtain the strongest PL intensity from the film, the proper Tm concentration was estimated to be around 1.0 mol%, and the proper Ce concentration was estimated to be around 1.3 mol%. Such Ta2O5:Tm, Ce co-sputtered thin films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as anti-reflection and downconversion layers for realizing high-efficiency silicon solar cells.展开更多
文摘We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.
文摘We prepared thulium and cerium co-doped tantalum-oxide (Ta2O5 :Tm, Ce) thin films by radiofrequency co-sputtering of Tm2O3 and CeO2 pellets on a Ta2O5 disc for the first time, and photoluminescence (PL) properties of the films annealed at 700°C, 800°C, 900°C, or 1000°C for 20 min were evaluated. PL peaks around a wavelength of 800 nm due to Tm3+?were observed for films annealed at 900°C or 1000°C. The peak intensities of films prepared using one Tm2O3 pellet and one CeO2 pellet were much stronger than those of films prepared using one Tm2O3 pellet and two CeO2 pellets or films prepared using two Tm2O3 pellets and one CeO2 pellet. To obtain the strongest PL intensity from the film, the proper Tm concentration was estimated to be around 1.0 mol%, and the proper Ce concentration was estimated to be around 1.3 mol%. Such Ta2O5:Tm, Ce co-sputtered thin films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as anti-reflection and downconversion layers for realizing high-efficiency silicon solar cells.
