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Preliminary Study on the Magnetic Properties of GeMn Nanocolumn/Ge Multilayers
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作者 thi giang le Minh Tuan Dau 《Materials Sciences and Applications》 2020年第7期441-449,共9页
Ge<sub>0.94</sub>Mn<sub>0.06</sub> nanocolumn thin film is a unique phase of GeMn diluted magnetic semiconductors (DMS) which exhibit Curie temperature (TC) > 400 K. The multilayers of Ge<... Ge<sub>0.94</sub>Mn<sub>0.06</sub> nanocolumn thin film is a unique phase of GeMn diluted magnetic semiconductors (DMS) which exhibit Curie temperature (TC) > 400 K. The multilayers of Ge<sub>0.94</sub>Mn<sub>0.06</sub> nanocolumns separated by nano-scaled spacers represent great interests for spintronic applications, such as spin valves or giant magneto-resistance (GMR) multilayers. In this article, we present the results obtained from the preliminary study on the exchange coupling in two types of GeMn nanocolumn/Ge multilayers. All the samples have been grown using molecular beam epitaxy (MBE). The superconducting quantum interference device (SQUID) magnetometer has been used to determine the magnetic properties of the samples. In the multilayer system Ge/[Ge<sub>0.94</sub>Mn<sub>0.06</sub>(40 nm)/Ge(d nm)]9/Ge<sub>0.94</sub>Mn<sub>0.06</sub>(40 nm)/Ge, no exchange coupling can be observed. Inversely, exchange coupling between the layers exists and depends on the thickness of the Ge spacers for the GeMn nanocolumns/Ge multilayer spin valve systems. The exchange coupling in the nanocolumns multilayer systems has been shown to be complex due to the leakage field induced by neighboring nanocolumns and the magnetic anisotropy of nanocolumns. 展开更多
关键词 MULTILAYERS Ferromagnetic Semiconductor GeMn Nanocolumns Exchange Coupling Thin Film
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Direct Structural Evidences of Epitaxial Growth Ge<SUB>1-X</SUB>Mn<SUB>X</SUB>Nanocolumn Bi-Layers on Ge(001)
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作者 thi giang le 《Materials Sciences and Applications》 2015年第6期533-538,共6页
Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of ... Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples. 展开更多
关键词 GeMn Diluted Magnetic Semiconductors Muti-Layers GeMn NANOCOLUMNS Thin Film Epitaxial Growth
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