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Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output 被引量:3
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作者 Sebastian Pregl Walter M. Weber +5 位作者 Daijiro Nozaki Jens Kunstmann Larysa Baraban Joerg Opitz thomas mikolajick Gianaurelio Cuniberti 《Nano Research》 SCIE EI CAS CSCD 2013年第6期381-388,共8页
我们由对有能力的自底向上的成年的硅 nanowires 的一个平行数组组成的现在的新奇 Schottky 障碍领域效果晶体管交付高当前的产量。nanowires 的轴的 silicidation 被用来创造导致多达 106 的开/关水流比率的定义 Schottky 连接。设备... 我们由对有能力的自底向上的成年的硅 nanowires 的一个平行数组组成的现在的新奇 Schottky 障碍领域效果晶体管交付高当前的产量。nanowires 的轴的 silicidation 被用来创造导致多达 106 的开/关水流比率的定义 Schottky 连接。设备概念利用 nanoscale 连接的唯一的运输性质为宏观的应用程序增加设备性能。用平行数组,在 0.5 V 的来源排水管电压的超过 500 A 的在水流上能被完成。当维持单个 nanowire 设备的转移特征时,跨导因此显著地被增加。由把几百 nanowires 合并到平行数组,工作晶体管的收益戏剧性地被增加, deviceto 设备可变性与单个设备相比被减少。这个新 nanowirebased 平台提供足够的当前的输出为器官的轻射出的二极管(LEDs ) 为生物传感器或一个开车阶段作为一个变换器被采用,当制造过程的自底向上的性质意味着它能为新奇可印刷的电子设备提供积木时。 展开更多
关键词 纳米尺度效应 场效应晶体管 硅纳米线 晶体管阵列 肖特基势垒 电流输出 并行阵列 宏观
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Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors 被引量:1
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作者 Eunhye Baek Sebastian Pregl +6 位作者 Mehrdad Shaygan Lotta Romhildt Walter M. Weber thomas mikolajick DmitryA. Ryndyk Larysa Baraban Gianaurelio Cuniberti 《Nano Research》 SCIE EI CAS CSCD 2015年第4期1229-1240,共12页
由组成的新奇感光性的混合地效果晶体管联邦货物税一器官的卟啉电影 / 氧化物 / 硅 nanowires 多重壳被介绍。由于在 nanowires 附近的氧化物壳,在混合 nanodevices 的水流的 photoswitching 被电场效果指导,在器官的电影以内由费用... 由组成的新奇感光性的混合地效果晶体管联邦货物税一器官的卟啉电影 / 氧化物 / 硅 nanowires 多重壳被介绍。由于在 nanowires 附近的氧化物壳,在混合 nanodevices 的水流的 photoswitching 被电场效果指导,在器官的电影以内由费用再分配导致了。这个原则是 photoinduced 电子注射的一种选择,为依靠在器官的分子和金属或半导体之间的直接连接的设备有效。在紫轻照明之上的混合 nanodevices 的切换的动力学被调查,包 nanowires 的卟啉电影的厚度上的强壮的依赖被发现。而且,器官的电影的厚度被发现为 nanowire 联邦货物税的切换的效率也是一个关键参数,开在轻照明下面由电流的比率代表了在上并且处于黑暗条件。我们建议卟啉电影收费解释 nanowire 联邦货物税的 optoelectronic 行为由器官的电影 / 氧化物 / 半导体连接调停了的一个简单模型。 展开更多
关键词 半导体场效应晶体管 硅纳米线 光电开关 氧化物 有机薄膜 杂化 纳米器件 FET
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Neuromorphic devices based on fluorite-structured ferroelectrics 被引量:1
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作者 Dong Hyun Lee Geun Hyeong Park +5 位作者 Se Hyun Kim Ju Yong Park Kun Yang Stefan Slesazeck thomas mikolajick Min Hyuk Park 《InfoMat》 SCIE CAS 2022年第12期1-32,共32页
A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the b... A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the buses between the logic and memory devices that are characteristic of the von Neumann computing architecture.Bio-mimicking neuromorphic computing has garnered considerable academic and industrial interest to resolve these challenges.Additionally,devices based on emerging nonvolatile memories capable of mimicking the behaviors of synapses and neurons,which are the main elements in biological computing systems(brains),are attracting significant interest from the device community.With the discovery of ferroelectricity in fluorite-structured oxides,such as HfO2 and ZrO2,which are compatible with the state-of-the-art complementary-metal-oxide-semiconductor processes,ferroelectric devices have rapidly evolved as the main direction of these research and development activities.Fundamental science related to fluorite-structured ferroelectrics has been intensively studied over the last decade.At present,the focus is gradually moving to practical applications,including neuromorphic computing and advanced classical processing or memory units in the conventional von Neumann architecture.However,despite its rapid development,the wealth of recent progress in neuromorphic computing devices based on fluorite-structured ferroelectrics has not been reviewed and systemized.This progress report comprehensively reviews and systemizes the recent progress in artificial synaptic and spiking neuron devices for neuromorphic computing based on fluorite-structured ferroelectrics. 展开更多
关键词 FERROELECTRICS HAFNIA neuromorphic computing semiconductor devices
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Emerging reconfigurable electronic devices based on two-dimensional materials:A review 被引量:1
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作者 Wenwen Fei Jens Trommer +2 位作者 Max Christian Lemme thomas mikolajick AndréHeinzig 《InfoMat》 SCIE CAS 2022年第10期38-61,共24页
As the dimensions of the transistor,the key element of silicon technology,are approaching their physical limits,developing semiconductor technology with novel concepts and materials has been the main focus of scientif... As the dimensions of the transistor,the key element of silicon technology,are approaching their physical limits,developing semiconductor technology with novel concepts and materials has been the main focus of scientific research and industry.In recent years,emerging reconfigurable technologies that offer device-level run-time reconfigurability have been explored and shown the potential to enhance device and circuit functions.Two-dimensional(2D)materials possess exquisite electronic properties and provide a suitable platform for reconfigurable technology owing to their atomic-thin thickness and high sensitivity to external electrical fields.In this review,we present an intensive survey of 2D-material-based devices with diverse reconfigurability,including carrier polarity,threshold voltage control,as well as multifunctional configurations enabled by 2D heterostructures.We discuss the working principles for these devices in detail and highlight the important figures of merit for performance improvement.We further provide a forward-looking perspective on the opportunities and challenges of these reconfigurable devices based on 2D materials in the field of computing technologies. 展开更多
关键词 2D materials electronic devices MULTIFUNCTION RECONFIGURABLE
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Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environment
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作者 Daijiro Nozaki Jens Kunstmann +5 位作者 Felix Zorgiebel Sebastian Pregl Larysa Baraban Walter M. Weber thomas mikolajick Gianaurelio Cuniberti 《Nano Research》 SCIE EI CAS CSCD 2014年第3期380-389,共10页
关键词 场效应晶体管 硅纳米线 离子效应 传输特性 环境 液体 化学传感器 缓冲溶液
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