A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the b...A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the buses between the logic and memory devices that are characteristic of the von Neumann computing architecture.Bio-mimicking neuromorphic computing has garnered considerable academic and industrial interest to resolve these challenges.Additionally,devices based on emerging nonvolatile memories capable of mimicking the behaviors of synapses and neurons,which are the main elements in biological computing systems(brains),are attracting significant interest from the device community.With the discovery of ferroelectricity in fluorite-structured oxides,such as HfO2 and ZrO2,which are compatible with the state-of-the-art complementary-metal-oxide-semiconductor processes,ferroelectric devices have rapidly evolved as the main direction of these research and development activities.Fundamental science related to fluorite-structured ferroelectrics has been intensively studied over the last decade.At present,the focus is gradually moving to practical applications,including neuromorphic computing and advanced classical processing or memory units in the conventional von Neumann architecture.However,despite its rapid development,the wealth of recent progress in neuromorphic computing devices based on fluorite-structured ferroelectrics has not been reviewed and systemized.This progress report comprehensively reviews and systemizes the recent progress in artificial synaptic and spiking neuron devices for neuromorphic computing based on fluorite-structured ferroelectrics.展开更多
As the dimensions of the transistor,the key element of silicon technology,are approaching their physical limits,developing semiconductor technology with novel concepts and materials has been the main focus of scientif...As the dimensions of the transistor,the key element of silicon technology,are approaching their physical limits,developing semiconductor technology with novel concepts and materials has been the main focus of scientific research and industry.In recent years,emerging reconfigurable technologies that offer device-level run-time reconfigurability have been explored and shown the potential to enhance device and circuit functions.Two-dimensional(2D)materials possess exquisite electronic properties and provide a suitable platform for reconfigurable technology owing to their atomic-thin thickness and high sensitivity to external electrical fields.In this review,we present an intensive survey of 2D-material-based devices with diverse reconfigurability,including carrier polarity,threshold voltage control,as well as multifunctional configurations enabled by 2D heterostructures.We discuss the working principles for these devices in detail and highlight the important figures of merit for performance improvement.We further provide a forward-looking perspective on the opportunities and challenges of these reconfigurable devices based on 2D materials in the field of computing technologies.展开更多
基金National Research Foundation(NRF)funded by the Korean Ministry of Science and ICT(Grant no.2020R1C1C1008193,2020M3F3A2A01081593,2021M3F3A2A02037889,and 2022M3F3A2A01073562).
文摘A continuous exponential rise has been observed in the storage and processing of the data that may not curtail in the foreseeable future.The required data processing speed and power consumption are restricted by the buses between the logic and memory devices that are characteristic of the von Neumann computing architecture.Bio-mimicking neuromorphic computing has garnered considerable academic and industrial interest to resolve these challenges.Additionally,devices based on emerging nonvolatile memories capable of mimicking the behaviors of synapses and neurons,which are the main elements in biological computing systems(brains),are attracting significant interest from the device community.With the discovery of ferroelectricity in fluorite-structured oxides,such as HfO2 and ZrO2,which are compatible with the state-of-the-art complementary-metal-oxide-semiconductor processes,ferroelectric devices have rapidly evolved as the main direction of these research and development activities.Fundamental science related to fluorite-structured ferroelectrics has been intensively studied over the last decade.At present,the focus is gradually moving to practical applications,including neuromorphic computing and advanced classical processing or memory units in the conventional von Neumann architecture.However,despite its rapid development,the wealth of recent progress in neuromorphic computing devices based on fluorite-structured ferroelectrics has not been reviewed and systemized.This progress report comprehensively reviews and systemizes the recent progress in artificial synaptic and spiking neuron devices for neuromorphic computing based on fluorite-structured ferroelectrics.
基金European Social Fund,Grant/Award Number:100382146Bundesministerium für Bildung und Forschung,Grant/Award Numbers:03ZU1106,16ME0399/16ME0400,16ES1121+1 种基金Deutsche Forschungsgemeinschaft,Grant/Award Numbers:LE 2440/8-1,LE 2440/7-1European Union's Horizon 2020,Grant/Award Numbers:829035,101016734,952792,881603。
文摘As the dimensions of the transistor,the key element of silicon technology,are approaching their physical limits,developing semiconductor technology with novel concepts and materials has been the main focus of scientific research and industry.In recent years,emerging reconfigurable technologies that offer device-level run-time reconfigurability have been explored and shown the potential to enhance device and circuit functions.Two-dimensional(2D)materials possess exquisite electronic properties and provide a suitable platform for reconfigurable technology owing to their atomic-thin thickness and high sensitivity to external electrical fields.In this review,we present an intensive survey of 2D-material-based devices with diverse reconfigurability,including carrier polarity,threshold voltage control,as well as multifunctional configurations enabled by 2D heterostructures.We discuss the working principles for these devices in detail and highlight the important figures of merit for performance improvement.We further provide a forward-looking perspective on the opportunities and challenges of these reconfigurable devices based on 2D materials in the field of computing technologies.